Abstract: Proposed is an X-ray detector including first and second electrodes on a substrate, and a photoconductor layer provided between the first electrode and the second electrode and configured to contain perovskite, wherein the photoconductor layer may include a first photoconductive layer made of a first perovskite with a columnar crystal structure, and a second photoconductive layer provided on the first photoconductive layer, and made of a second perovskite with a cubic crystal structure.

Abstract: Proposed is an X-ray detector including a sensor panel configured to include first and second electrodes on a substrate, and a photoconductor layer between the first electrode and the second electrode, and a heating member located behind the sensor panel, wherein the photoconductor layer contains a ferroelectric material.

Abstract: Proposed is an X-ray detector including first and second electrodes on a substrate, and a photoconductor layer provided between the first electrode and the second electrode and configured to contain perovskite, wherein the perovskite has a cubic crystal structure, and a crystal size of the perovskite is 3 ?m to 10 ?m.

Abstract: Proposed is an X-ray detector with a driving sequence that repeats a standby section, a ready section, an integration section, and a readout section, the X-ray detector including a first electrode, on a substrate, to which a pixel voltage is applied, a photoconductor layer on the first electrode, and a second first electrode on the photoconductor layer, wherein a switching voltage having a potential less than or equal to a potential of the pixel voltage is applied to the second electrode during at least a portion of the standby section, and a bias voltage is applied to the second electrode between the standby section and a next standby section.

Abstract: Proposed is an X-ray detector including a substrate with a defined display area and a non-display area around the display area, a first electrode provided in the display area on the substrate, a photoconductor layer located on the first electrode and provided in the display area and the non-display area, a second electrode provided on the photoconductor layer, and at least one contact pattern provided in the non-display area and configured to surround the display area, wherein the photoconductor layer is in contact with the at least one contact pattern located therebelow.

Abstract: Provided are an X-ray detector having fabrication fault tolerant structure and a method for manufacturing the same using a micro-transfer printing (MTP) technique. The X-ray detector may include a photodiode layer formed on a base substrate within a pixel area and including a plurality of photodiode pixel units, a dummy layer formed the base substrate within a peripheral area, a plurality of pixel driving integrated chips printed on the photodiode layer, a plurality of primary column and row integrated chips printed on the dummy layer, and metal lines coupling the column and row integrated chips with pixel driving integrated chips and other constituent elements, wherein the plurality of pixel driving integrated chips and primary column and row integrated chips are manufactured separately from the photodiode layer and the dummy layer and attached on the photodiode layer and the dummy layer, respectively.

Abstract: Provided are an X-ray detector having fabrication fault tolerant structure and a method for manufacturing the same using a micro-transfer printing (MTP) technique. The X-ray detector may include a photodiode layer formed on a base substrate within a pixel area and including a plurality of photodiode pixel units, a dummy layer formed the base substrate within a peripheral area, a plurality of pixel driving integrated chips printed on the photodiode layer, a plurality of primary column and row integrated chips printed on the dummy layer, and metal lines coupling the column and row integrated chips with pixel driving integrated chips and other constituent elements, wherein the plurality of pixel driving integrated chips and primary column and row integrated chips are manufactured separately from the photodiode layer and the dummy layer and attached on the photodiode layer and the dummy layer, respectively.

Abstract: Provided are an X-ray detector including a plurality of pixel driving micro integrated chips separately fabricated from a photodiode layer and printed on the photodiode layer and a method for manufacturing the X-ray detector. The X-ray detector may include a photodiode layer and a driver layer. The photodiode layer may include a plurality of photodiodes and be configured to receive X-ray that have passed through a target object and convert the received X-ray to electric signals. The driver layer may be formed on the photodiode layer and include a plurality of micro driving integrated chips each coupled to two or more photodiodes in the photodiode layer. The plurality of pixel driving integrated chips may be manufactured separately from the photodiode layer and printed on the photodiode layer using a micro-transfer printing method.

Abstract: Provided are an X-ray detector including a plurality of pixel driving micro integrated chips separately fabricated from a photodiode layer and printed on the photodiode layer and a method for manufacturing the X-ray detector. The X-ray detector may include a photodiode layer and a driver layer. The photodiode layer may include a plurality of photodiodes and be configured to receive X-ray that have passed through a target object and convert the received X-ray to electric signals. The driver layer may be formed on the photodiode layer and include a plurality of micro driving integrated chips each coupled to two or more photodiodes in the photodiode layer. The plurality of pixel driving integrated chips may be manufactured separately from the photodiode layer and printed on the photodiode layer using a micro-transfer printing method.