Abstract: A latch with a unique nesting toggle linkage that extends and retracts a hook via movement of an actuation handle. The linkage links have U-shaped lateral cross sections with a central channel into which the respective links nest when the latch is closed to minimize the overall volume of the latch. The links fold toward each other while closing to reduce the latch's overall length when fully closed. The components of the latch are arranged so that the center of gravity of the latch is positioned in front of a mounting pin; therefore, in applications where the latch swings in the vertical plane, the hook will necessarily hang downwardly away from the keeper when the latch is open. Optionally, a keeper detector prevents the actuation handle from closing if the keeper has not been first captured in the mouth of the hook. A rod-and-cylinder slide mechanism may be employed between the hook body and the mounting pin.

Abstract: A channel latch having a lock for holding the latch bolt closed which includes a secondary locking feature that prevents the lock from being turned. The lock mechanism has a tumbler barrel with a central reciprocal plunger that has a key portion which outwardly projects through the barrel into a keyway in the bolt. The plunger is depressed downward against a spring when a tool is inserted into the tumbler to turn it. The keyway includes longitudinal grooves and a pathway that restrict the upward release of the plunger only when the tumbler is turned to either the locked or unlocked position. Once the plunger is released the key and groove abutment prevents the lock from being turned.

Abstract: A system evaluates occurrences of low level electrostatic discharge events in a manufacturing or processing environment or the like by encapsulating each of a plurality of a MOSFETs in a corresponding package having conductive first and second groups of leads coupled to the gate and source and/or drain electrodes of the MOSFET, respectively. The encapsulated MOSFET then is moved through the environment, wherein an electrostatic discharge causes current to flow into the first external electrode, stressing the gate oxide of the MOSFET and producing a permanent low resistance condition therein. The encapsulated MOSFET then is removed from the environment and tested by measuring an electrical parameter indicative of the low resistance condition between the first and second electrodes of the MOSFET. A statistical analysis then is performed on the data obtained by testing all of the MOSFETs to determine how to reduce or avoid ESD in the environment.