Patents Assigned to Qspeed Semiconductor, Inc.
  • Multiple doped channel in a multiple doped gate junction field effect transistor
    Patent number: 7211845
    Abstract: A multiple doped channel in a multiple doped gate junction field effect transistor. In accordance with a first embodiment of the present invention, a junction field effect transistor (JFET) circuit structure comprises a vertical channel. The vertical channel comprises multiple doping regions. The vertical channel may comprise a first region for enhancement mode operation and a second region for depletion mode operation.
    Type: Grant
    Filed: April 19, 2005
    Date of Patent: May 1, 2007
    Assignee: Qspeed Semiconductor, Inc.
    Inventors: Ho-Yuan Yu, Jian Li