Patents Assigned to QUALCOMM MEMS Technologies
  • Publication number: 20130046803
    Abstract: This disclosure provides implementations of dither-aware image coding processes, devices, apparatus, and systems. In one aspect, a portion of received image data is selected. First spatial domain values in the selected portion of the image data are transformed to first transform domain coefficients. Second spatial domain values in a designated dither matrix are transformed to second transform domain coefficients. A ratio of each of the first transform domain coefficients to a respective second transform domain coefficient is determined. The first transform domain coefficients are selectively coded in accordance with the determined ratios to define coded first transform domain coefficients. A reverse transformation is performed to transform the coded first transform domain coefficients to third spatial domain values defining a coded portion of the image data. By way of example, transformations such as discreet cosine transforms or discreet wavelet transforms can be used.
    Type: Application
    Filed: August 18, 2011
    Publication date: February 21, 2013
    Applicant: Qualcomm MEMS Technologies
    Inventors: Manu Parmar, Jennifer Lee Gille, Koorosh Aflatooni
  • Publication number: 20120242627
    Abstract: This disclosure provides systems, methods and apparatus for fabricating thin film transistor devices. In one aspect, a substrate having a source region, a drain region, and a channel region between the source region and the drain region is provided. The substrate also includes an oxide semiconductor layer, a first dielectric layer overlying the channel region, and a first metal layer on the dielectric layer. A second metal layer is formed on the oxide semiconductor layer overlying the source region and the drain region. The oxide semiconductor layer and the second metal layer are treated to form a heavily doped n-type oxide semiconductor in the oxide semiconductor layer overlying the source region and the drain region. An oxide in the second metal layer also can be formed.
    Type: Application
    Filed: March 21, 2011
    Publication date: September 27, 2012
    Applicant: QUALCOMM MEMS TECHNOLOGIES
    Inventors: Cheonhong Kim, John Hyunchul Hong, Yaoling Pan
  • Publication number: 20110222140
    Abstract: A power generating black mask comprising an anti-reflection layer deposited over a substrate, a first electrode layer deposited over the anti-reflection layer, a semi-conductor layer deposited over the first electrode layer and a second electrode layer deposited over the semi-conductor layer.
    Type: Application
    Filed: May 24, 2011
    Publication date: September 15, 2011
    Applicant: QUALCOMM MEMS Technologies
    Inventors: Ion Bita, Chun-Ming Wang, Gang Xu
  • Publication number: 20110148828
    Abstract: Methods and systems are disclosed for providing video data and display signals. In one embodiment, a system is configured to display video data on an array of bi-stable display elements, where the system includes a processor, a display comprising an array of bi-stable display elements, a driver controller connected to the processor and configured to receive video data from the processor, and an array driver configured to receive video data from the driver controller and display signals from the processor, and to display the video data on the array of bi-stable display elements using the display signals.
    Type: Application
    Filed: February 28, 2011
    Publication date: June 23, 2011
    Applicant: QUALCOMM MEMS Technologies
    Inventors: Jeffrey B. Sampsell, Karen Tyger, Mithran Mathew