Abstract: A device for injecting into a chamber at least one precursor comprises at least one tank containing the precursor, means for keeping the tank at a higher pressure than that of the chamber, and at least one injector connected to the tank. It also comprises a device for measuring the mean flowrate, arranged between the tank and the injector and a mechanical low-pass filter arranged between the device for measuring the flowrate and the injector. The control circuit comprises outputs respectively connected to the tank and to the injector for controlling said pressure and/or the injection time and/or the injection frequency, in such a way as to periodically inject droplets of precursor into the chamber. The control circuit also comprises a regulation input connected to the output of the device for measuring the mean flowrate, in such a way as to control said pressure and/or the injection time and/or the injection frequency in order to keep the mean flowrate at a predetermined set-point.

Abstract: The invention relates to the deposition of thin silver films on various substrates, particularly superconductor substrates. The method consists of CVD deposition of silver on a substrate with the aid of a silver precursor solution. The silver precursor is an RCO2Ag silver carboxylate, wherein R is a linear or branched radical having 3-7 carbon atoms, used in the form of an organic liquid solution. The precursor concentration of the solution ranges from 0.01 to 0.6 mol/l. The organic liquid comprises an amine and/or a nitrile and, optionally, a solvent whose evaporation temperature is lower than the decomposition temperature of the precursor. The percentage by volume of the amine and/or nitrile in the organic liquid is more than 0.1%.