Abstract: An apparatus for application of a chemical process to a workpiece in which movement and precise location of the workpiece within the apparatus is accomplished by means of a single linear actuator and two locator components. A sequence of liquid solutions may be applied to a surface of the workpiece during processing, and a sequence of controlled atmospheres may be provided within a reaction chamber of the apparatus to thereby facilitate implementation of chemical processes that utilize both liquid-phase and gas-phase reactions in concert.

Abstract: A multi-region material structure and process for forming capacitors and interconnect lines for use with integrated circuits provides (1) capacitor first or bottom electrodes comprising a transition-metal nitride; (2) a capacitor dielectric comprising a transition-metal oxide; (3) capacitor second or top electrodes comprising a transition-metal nitride, a metal or multiple conductive layers; (4) one or more levels of interconnect lines; (5) electrical insulation between adjacent regions as required by the application; and (6) bonding between two regions when such bonding is required to achieve strong region-to-region adhesion or to achieve a region-to-region interface that has a low density of electrical defects.

Abstract: A multi-region material structure and process for forming capacitors and interconnect lines for use with integrated circuits provides (1) capacitor first or bottom electrodes comprising a transition-metal nitride; (2) a capacitor dielectric comprising a transition-metal oxide; (3) capacitor second or top electrodes comprising a transition-metal nitride, a metal or multiple conductive layers; (4) one or more levels of interconnect lines; (5) electrical insulation between adjacent regions as required by the application; and (6) bonding between two regions when such bonding is required to achieve strong region-to-region adhesion or to achieve a region-to-region interface that has a low density of electrical defects.

Abstract: An improved structure and process for contacting and interconnecting semiconductor devices within a VLSI integrated circuit are described. The structure includes several regions which cooperate to provide (1) contacts of low electrical resistance to semiconductor device terminals, (2) barriers to unwanted metallurgic reactions, (3) strong bonds between major regions of the structure, (4) overall mechanical strength, (5) a primary current path of low electrical resistance, (6) a secondary current path in parallel with the primary current path, and (7) circuit bond pads for use in making electrical connections to the VLSI circuit. Because of the structure's mechanical strength, semiconductor devices may be placed beneath circuit bond pads. The inventive process facilitates accurate control of the composition and thickness of each of the several regions within the material structure.