Abstract: This disclosure relates post chemical mechanical planarization cleaning composition of semiconductor substrate for advanced electronics fabrication and packaging. It provides novel corrosion inhibition and quality upmost Cu-low K surfaces to the demanding reliability of nano device and Cu interconnection. Its efficacious cleaning without changing of ultra-low K dielectric and interfering with ultimate electronics performance also offers a cleaning solution to the Cu-low K structure of post reactive ion etching as well as resist ashing in semiconductor fabrication process flow.

Abstract: A thermally conductive interface material is in need to electronic packaging to meet escalated heat dissipation for performance demanding electronics. To survive thermal mismatch introduced stress at an interface of nominal thickness of 200 um and below between electronic component and heat spreader, a thermally conductive silicone gel comprises (A) a trimethyl-terminated organopolysiloxane containing a silicone-bonded alkenyl group or groups, (B) an alkeny-terminated organopolysiloxane, (C) thermally conductive filler with addition of nano particles, (D) an organohydrogen-polysiloxane, (E) an addition reaction catalyst, (F) a catalytic reaction inhibitor, and (G) an alkoxysilane bonding agent. The interface material provides thermal conductivity with low complex storage modulus.