Abstract: In power-transistor test apparatuses, changing wiring connections to correspond to test items necessitates protracted time. Another issue has been that because connection changing necessitates space for the job, the test apparatuses have become large-scale. To address these issues, disclosed power-transistor test apparatus implementations are furnished with switch-circuit boards on which a conductor plate and a switch circuit are mounted. Plural switch-circuit boards are arranged in parallel, with the conductor plate on each switch-circuit board having a section that juts out beyond the board. Wiring connects the element terminals of an under-test power transistor to the jutting section of the conductor plate of a chosen switch-circuit board. Switching on the switch circuit of the chosen switch-circuit board supplies a test current from a power supply to the under-test power transistor, whereby a power-cycle test is carried out.

Abstract: Power semiconductor-device test apparatuses carrying out gate-signal controlled on/off switching of high-amp test current for various forms of device lifespan testing. Fork plugs or like connectors are insertable through openings of choice in walls partitioning the test apparatus interior for connection, in lieu of altering of wire-line changes, to switch circuits of choice, facilitating test-type connection changing. Sample-connection circuits, removable by means of connectors, include gate-driver, variable-resistor, constant-current, and voltage-output circuits, and via the gate driver circuits generate gate signals, adjustable via the variable-resistor circuits, shorting-circuit on/off applied to the gate terminals of devices under test. The constant-current circuit feeds a diode across the non-gate terminals of a device under test. A control circuit varies current, gate, and output voltages to set the test conditions so that device-under-test temperature will be a predetermined value.

Abstract: Power semiconductor test apparatuses carrying out gate-signal controlled on/off switching of high-amp test current for various forms of device lifespan testing. Fork plugs or like connectors are insertable through openings of choice in walls partitioning the test apparatus interior for connection, in lieu of altering of wire-line changes, to switch circuits of choice, facilitating test-type connection changing. Sample-connection circuits, removable by means of connectors, include gate-driver, variable-resistor, constant-current, and voltage-output circuits, and via the gate driver circuits generate gate signals, adjustable via the variable-resistor circuits, shorting-circuit on/off applied to the gate terminals of devices under test. The constant-current circuit feeds a diode across the non-gate terminals of a device under test. A control circuit varies current, gate, and output voltages to set the test conditions so that device-under-test temperature will be a predetermined value.

Abstract: Power semiconductor-device test apparatuses carrying out gate-signal controlled on/off switching of high-amp test current for various forms of device lifespan testing. Fork plugs or like connectors are insertable through openings of choice in walls partitioning the test apparatus interior for connection, in lieu of altering of wire-line changes, to switch circuits of choice, facilitating test-type connection changing. Sample-connection circuits, removable by means of connectors, include gate-driver, variable-resistor, constant-current, and voltage-output circuits, and via the gate driver circuits generate gate signals, adjustable via the variable-resistor circuits, shorting-circuit on/off applied to the gate terminals of devices under test. The constant-current circuit feeds a diode across the non-gate terminals of a device under test. A control circuit varies current, gate, and output voltages to set the test conditions so that device-under-test temperature will be a predetermined value.

Abstract: In EL display panels fabricated by vapor deposition, a vapor-deposition fine mask is employed to form red, green, and blue pixels. An issue, however, has been that misregistration of the vapor-deposition fine mask occurs, lowering manufacturing yields. To resolve this issue, on a thin-film transistor (TFT) substrate, red, green, and blue pixel electrodes are fashioned in matrix form. The TFT substrate is conveyed into a vapor-deposition chamber. Under a vacuum, an organic evaporation source is employed to codeposit a light-emitting layer composed of a host material and a red guest material on the TFT substrate display screen. An ultraviolet laser beam generated by a laser device is optically guided into the vapor-deposition chamber through a laser window and directed on the light-emitting layer formed onto the green and blue pixel electrodes. Positional selecting on the green and blue pixels is carried out by controlling a mirror galvanometer.

Abstract: In this testing device, a space in which a transistor 117 is disposed and a space in which a driving circuit for testing is disposed are separated by a partition wall 214. The driving circuit has a plurality of switch circuit boards 201, and a conductive plate 204 for connection is attached to the switch circuit board 201. A fork plug 205e is connected to a collector c terminal of the transistor 117 to be tested, and a fork plug 205c is connected to an emitter e terminal. The insertion of the fork plug 205 into an opening 216 provided in the partition wall 214 allows the connection of the fork plug 205 and the conductive plate 204. By changing the position of the opening 216 for inserting the fork plug 205, the connection to the driving circuit can be changed in accordance with an item to be tested.

Abstract: In this testing device, a space in which a transistor 117 is disposed and a space in which a driving circuit for testing is disposed are separated by a partition wall 214. The driving circuit has a plurality of switch circuit boards 201, and a conductive plate 204 for connection is attached to the switch circuit board 201. A fork plug 205e is connected to a collector c terminal of the transistor 117 to be tested, and a fork plug 205c is connected to an emitter e terminal. The insertion of the fork plug 205 into an opening 216 provided in the partition wall 214 allows the connection of the fork plug 205 and the conductive plate 204. By changing the position of the opening 216 for inserting the fork plug 205, the connection to the driving circuit can be changed in accordance with an item to be tested.

Abstract: In EL display panels fabricated by vapor deposition, a vapor-deposition fine mask is employed to form red, green, and blue pixels. An issue, however, has been that misregistration of the vapor-deposition fine mask occurs, lowering manufacturing yields. To resolve this issue, on a thin-film transistor (TFT) substrate, red, green, and blue pixel electrodes are fashioned in matrix form. The TFT substrate is conveyed into a vapor-deposition chamber. Under a vacuum, an organic evaporation source is employed to codeposit a light-emitting layer composed of a host material and a red guest material on the TFT substrate display screen. An ultraviolet laser beam generated by a laser device is optically guided into the vapor-deposition chamber through a laser window and directed on the light-emitting layer formed onto the green and blue pixel electrodes. Positional selecting on the green and blue pixels is carried out by controlling a mirror galvanometer.

Abstract: Provided are an electronic component manufacturing method by which even a platable layer made of a difficult-to-plate material can be easily plated with good adhesion without using a special chemical solution or a photolithography technique, and an electronic component which has a peel strength of 0.1 N/mm or greater as measured by a copper foil peel test. A picosecond laser beam having a pulse duration on the order of a picosecond or a femtosecond laser beam having a pulse duration on the order of a femtosecond is emitted at a surface of a platable layer (2) in order to roughen the surface, a wiring pattern is formed using a mask (13), and a plated part (12) is formed on the surface of the wiring pattern.

Abstract: Provided are an electronic component manufacturing method by which even a platable layer made of a difficult-to-plate material can be easily plated with good adhesion without using a special chemical solution or a photolithography technique, and an electronic component which has a peel strength of 0.1 N/mm or greater as measured by a copper foil peel test. A picosecond laser beam having a pulse duration on the order of a picosecond or a femtosecond laser beam having a pulse duration on the order of a femtosecond is emitted at a surface of a platable layer (2) in order to roughen the surface, a wiring pattern is formed using a mask (13), and a plated part (12) is formed on the surface of the wiring pattern.

Abstract: An EL display panel fabricated by evaporation creates red, green, and blue pixels using a fine deposition mask (251). However, the displacement of the fine deposition mask (251) decreases the manufacturing yield. In the present invention, red, green, and blue pixel electrodes are arranged in a matrix on a TFT substrate (52). The TFT substrate (52) is transferred into a vacuum deposition chamber (56). A light-emitting layer made up of a host material and a red guest material is codeposited on the presentation screen of the TFT substrate using an organic evaporation source (66) in a vacuum. A laser device (58) generates ultraviolet laser light (59) which is guided into the vacuum deposition chamber (56) through a laser window (63) to irradiate a light-emitting layer formed on the green and blue pixel electrodes. The positions of the green and blue pixels are selected by controlling a galvano mirror (62).