Abstract: Various embodiments provide methods, apparatuses, systems, or computer program products for performing decreased crosstalk atomic object reading/detection. A controller is operatively connected to components of a system comprising a confinement apparatus comprising RF electrodes defining an RF null axis and a plurality of longitudinal electrodes. The components comprise voltage sources and manipulation sources. The controller is configured to cause an atomic object being read and neighboring atomic object(s) to be confined by the confinement apparatus; and cause the voltage sources to provide first control signals to longitudinal electrodes. The first control signals cause the longitudinal electrodes to generate a push field configured to cause one of the atomic object being read or the neighboring atomic object(s) to move off the RF null axis.

Abstract: A quantum system controller configured to perform (near) real-time quantum error correction is provided. The controller comprises a processing device comprising at least one first processing element; a time-indexed command (TIC) sequencer comprising at least one second processing element; and a plurality of driver controller elements configured to control the operation of respective components and associated with respective buffers and processing elements. The processing device is configured to generate commands and the TIC sequencer is configured to cause the time-indexed execution of the commands by the appropriate driver controller elements.

Abstract: A high-voltage semiconductor switch is provided. The high-voltage semiconductor switch comprises one or more switch subcircuits, wherein each switch subcircuit may comprise one or more FET circuits and voltage-shifting transistor. The high-voltage semiconductor switch may be configured based on operational and environmental requirements, such as those of a quantum computing system, wherein the high-voltage switch may be located in a cryostat or vacuum chamber.

Abstract: A controller of a quantum system identifies a phase update trigger for a quantum object of the quantum system and an interaction time. Responsive to identifying the phase update trigger, the controller determines, for between a first time and the interaction time, (a) a location/transport effect on a phase of the quantum object based on locations thereof and transport operations performed thereon, and (b) a quantum operation effect on the phase of the quantum object based on any quantum operations applied thereto. The immediately previous phase update for the quantum object occurred at the first time. Based on the location/transport effect, the quantum operation effect, and the interaction time, the controller determines an interaction time phase of the quantum object. The controller adjusts operation of a manipulation source such that a phase of a signal generated by the manipulation source corresponds to the interaction time phase at the interaction time.

Abstract: Provided is a novel beam delivery system for quantum computing applications that includes a beam delivery photonic integrated circuit on a chip and an optical relay assembly. The beam delivery photonic integrated circuit on a chip may contain one or more layers, and a layer may contain one or more inputs connecting one or more outputs. The optical relay assembly receives a beam or beams from one or more outputs from a layer of the beam delivery photonic integrated circuit. The optical relay assembly focuses each received beam on a corresponding position of an atomic object confinement apparatus.

Abstract: An ion trap apparatus (e.g., ion trap chip) having a plurality of electrodes is provided. The ion trap apparatus may comprise a plurality of interconnect layers, a substrate, and at least one integrated switching network layer disposed between the plurality of interconnect layers and the substrate. The integrated switching network layer may comprise a plurality of monolithically-integrated controls and/or switches configured to condition a voltage signal applied to at least one of the plurality of electrodes. An example ion trap apparatus may comprise a surface ion trap chip. The ion trap apparatus may be configured to operate within a cryogenic chamber.

Abstract: Integrated passive/active modulator units, integrated passive/active modulators comprising one or more units, and corresponding methods of fabrication and use are provided. In an example embodiment, a unit comprises an upstream passive portion comprising a passive waveguide; a downstream passive portion comprising a continuation of the passive waveguide; and an active portion between the upstream passive portion and the downstream passive portion. The active portion comprises an active waveguide and electrical contacts in electrical communication with the active waveguide. The active waveguide comprises an upstream taper and/or a downstream taper. The upstream taper is configured to optically couple the active waveguide to the passive waveguide of the upstream portion and the downstream taper is configured to optically couple the active waveguide to the continuation of the passive waveguide of the downstream portion.

Abstract: Various embodiments of the present disclosure provide for instruction compilation for at least one time slice in a one-dimensional quantum computing environment. In this regard, embodiments generate an algorithm swap command set by performing an even-odd transposition sort based on at least an initial qubit position set and a target qubit position set for one or more time slices. The algorithm swap command set may correspond to a qubit manipulation instruction set which can be used to generate a hardware instruction set that, upon execution, efficiently repositions any number of qubits to the target positions for gating.

Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.

Abstract: A shield for a cryogenic chamber and a cryogenic chamber comprising a shield are described. In an example embodiment, a cryogenic chamber comprises an interior housing comprising housing walls that define an action chamber. The action chamber is configured to be cryogenically cooled to an action temperature. The cryogenic chamber further comprises an interior shield at least partially sandwiched within the housing walls. The interior shield is made of a first material that acts as a superconductor at the action temperature.

Abstract: Embodiments relate to initializing and/or performing state preparation for an atomic object. The controller controls first manipulation sources to provide first manipulation signals and second manipulation sources to provide second manipulation signals. The first and second manipulation signals are incident on the atomic object. The atomic object has a nuclear spin greater than one half. A ground state manifold of the atomic object comprises one or more selected ground manifold states and non-selected ground manifold states. The first manipulation signals are configured to drive transitions from the non-selected ground manifold states to one or more pumped manifolds of the atomic object and suppress transitions out of the selected ground manifold states. The second manipulation signals are configured to stimulate the atomic object to decay a pumped manifold into a decayed state, wherein there is a non-zero probability that the decayed state is one of the selected ground manifold states.

Abstract: An experimental payload and cryogenic system are provided. An experimental payload including a cryogenic chamber is provided. The cryogenic chamber includes an action chamber configured to be cryogenically cooled to an action temperature. The cryogenic chamber also includes an inner cooling ring cooled via an internal braiding system. The inner cooling ring is configured to operate at a first temperature. The cryogenic chamber further includes an outer ring in communication with the inner cooling ring. The outer ring is configured to absorb heat from the experimental payload. The outer ring defines a second temperature that is greater than the first temperature. The cryogenic chamber also includes a plurality of legs operably coupled to the cryogenic chamber at a top end of each leg. The legs are characterized by a low thermal conductivity and the experimental payload is configured to be attached to a base of a cryocooler.

Abstract: The present subject matter provides technical solutions for the technical problems facing quantum computing by improving the accuracy and precision of qubit readout. Technical solutions described herein improves the readout fidelity by reducing the ambiguity between the bright and dark states. In an embodiment, this includes transferring the qubit population that is in the dark quantum state to an auxiliary third state. The auxiliary third state remains dark and reduces the mixing between the logical bright and dark states. This process uses multiple laser pulses to ensure high fidelity population transfer, thus preserving the dark nature of the dark state. Improving readout fidelity of 171Yb+ qubits may improve fidelity by an order of magnitude, such as by improving readout fidelity from 99.9% to 99.99%. This improvement in detection fidelity may substantially increase the computational power of a quantum computer.

Abstract: An ion trap apparatus is provided. The ion trap apparatus comprises two or more radio frequency (RF) rails formed with substantially parallel longitudinal axes and with substantially coplanar upper surfaces; and two or more sequences of trapping and/or transport (TT) electrodes with each sequence formed to extend substantially parallel to the substantially parallel longitudinal axes of the RF rails. The two or more RF rails and the two or more sequences of TT electrodes define an ion trap. The two or more sequences of TT electrodes are arranged into a number of zones. Each zone comprises wide matched groups of TT electrodes and at least one narrow matched group of TT electrodes. A wide TT electrode is longer and/or wider in a direction substantially parallel to the substantially parallel longitudinal axes of the RF rails than a narrow TT electrode.

Abstract: A cooled system includes an enclosure having an outer surface and an inner surface comprising a cooled enclosed area, multiple cable brackets thermally coupled to the outer surface of the enclosure, each cable bracket including a first surface conforming to the outer surface of the enclosure and an opening therethrough sized to hold a cable and conduct heat from the cable to the outer surface of the enclosure.

Abstract: A quantum computer controller receives a quantum circuit comprising circuit slices. The first slice comprises a past causal cone of a first system qubit wire at a fully evolved level of the circuit. An i-th slice contains all gates that are within a past causal cone of a system qubit wire that reaches the fully evolved level in slice i that are not in the past causal cone of a system qubit wire that reaches the fully evolved level in slice i?j. The controller causes execution of the i-th slice using the physical qubits; causes a physical qubit that was evolved along a system qubit wire to the fully evolved level via execution of the i-th slice to be reinitialized and reintroduced onto a system qubit wire at a base level of the i+m-th slice; and causes the quantum computer to use the physical qubit to execute the i+m-th slice.

Abstract: One or more embodiments are directed to establishing electrical connections through silicon wafers with low resistance and high density, while at the same time maintaining processability for further fabrication. Such connections through silicon wafers enable low resistance connections from the top side of a silicon wafer to the bottom side of the silicon wafer.