Abstract: A process for producing a pattern in a radiation sensitive fluoropolymer resist, comprises depositing a layer of the radiation sensitive fluoropolymer resist on a face of a substrate. The radiation sensitive fluoropolymer resist is exposed to an electron beam to define the pattern, the resist then having an exposed fluoropolymer resist area defining the pattern and an unexposed fluoropolymer resist area. The exposed fluoropolymer resist area is finally removed by contacting the radiation sensitive fluoropolymer resist with an alkaline polar aprotic solvent system leaving only the unexposed fluoropolymer resist area on the substrate.
Type:
Application
Filed:
September 16, 2005
Publication date:
March 22, 2007
Applicant:
Quantiscript Inc., Universite de Sherbrooke
Abstract: A lithography method for fabricating structures of etch-resistant metal-semiconductor compound on a substrate with sub-micrometer scale resolutions is described. Superposed layers of metal and semiconductor capable of reacting with each other to form etch-resistant metal/semiconductor compound are deposited on the substrate. Radiation from a X-ray/EUV source propagates through a patterned X-ray transparent/EUV reflective mask and is projected on the superposed metal and semiconductor layers. The X-ray transparent mask includes X-ray absorbing patterns imparted to the X-ray radiation while the EUV reflective mask includes EUV absorbing patterns also imparted to the EUV radiation. The energy of X-ray/EUV photons is absorbed locally by the metal and semiconductor layers. Absorption of this energy induces a reaction between the two layers responsible for the formation of etch-resistant metal/semiconductor compound with structures corresponding to the patterns imparted to the radiation by the X-ray/EUV mask.
Type:
Grant
Filed:
February 5, 2001
Date of Patent:
May 24, 2005
Assignee:
Quantiscript, Inc.
Inventors:
Dominique Drouin, Eric Lavallée, Jacques Beauvais
Abstract: A process for producing a pattern of negative electron beam resist comprises: depositing a layer of plasma polymerized fluoropolymer on a face of a substrate, the plasma polymerized fluoropolymer forming the negative electron beam resist; producing an electron beam; moving the electron beam on the layer of plasma polymerized fluoropolymer to define the pattern, the layer then having exposed fluoropolymer areas defining the pattern and unexposed fluoropolymer areas; and removing the unexposed fluoropolymer areas to leave only the pattern on the face of the substrate.
Type:
Grant
Filed:
April 25, 2002
Date of Patent:
February 15, 2005
Assignee:
Quantiscript Inc.
Inventors:
Yousef Awad, Éric Lavallée, Jacques Beauvais, Dominique Drouin
Abstract: The present invention relates to a method of producing a structure of etch-resistant polymer on a substrate. A layer of sterol capable of polymerizing to form this structure is first deposited on a face of the substrate. Then, a first region of the layer of sterol is exposed to an electron beam to locally polymerize this layer and form the structure of etch-resistant polymer. A second region of the layer of sterol that has not been exposed to the electron beam is removed to leave on the face of the substrate only the structure of etch-resistant polymer. Finally, a region of the face of the substrate not covered by the structure of etch-resistant polymer can be etched away, and the structure of etch-resistant polymer removed following this etching.
Type:
Application
Filed:
March 20, 2002
Publication date:
September 25, 2003
Applicant:
QUANTISCRIPT INC.
Inventors:
Eric Lavallee, Jacques Beauvais, Dominique Drouin, Melanie Cloutier
Abstract: A method for fabricating a sub-micron structure of etch-resistant metal/semiconductor compound on a substrate of semiconductor material comprises the step of depositing onto the substrate a layer of metal capable of reacting with the semiconductor material to form etch-resistant metal/semiconductor compound, and the step of producing a focused electron beam. The focused electron beam is applied to the layer of metal to locally heat the metal and semiconductor material and cause diffusion of the metal and semiconductor material in each other to form etch-resistant metal/semiconductor compound. The focused electron beam is displaced onto the layer of metal to form the structure of etch-resistant metal/semiconductor compound. Finally, the layer of metal is wet etched to leave on the substrate only the structure of metal/semiconductor compound.
Type:
Grant
Filed:
September 17, 1998
Date of Patent:
July 17, 2001
Assignee:
Quantiscript, Inc.
Inventors:
Jacques Beauvais, Dominique Drouin, Eric Lavallee