Abstract: Various embodiments are described herein for a sensor device, a method of manufacturing said sensor device, and a camera device constructed using said sensor device. The sensor device includes: a readout integrated circuit; an array of electrical contacts mounted to the readout integrated circuit; a solution processed layer deposited on top of the array of electrical contacts; and a spectral band filter layer deposited on top of the solution processed layer, wherein the spectral band filter layer is optically aligned with the solution processed layer and wherein the readout integrated circuit, the array of electrical contacts and the solution processed layer form together a focal plane array for receiving light from a lens device.

Abstract: A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4 (111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.