Abstract: A method of cleaning metal-containing deposits from a metal surface of a process chamber component includes immersing the metal surface in an electrochemical cleaning bath solution. A negative electrical bias is applied to the metal surface to electrochemically clean the metal-containing deposits from the metal surface. The cleaning method is capable of removing metal-containing deposits such as tantalum-containing deposits from the metal surface substantially without eroding the surface, and may be especially advantageous in the cleaning of components having textured surfaces.

Abstract: An exemplary embodiment discloses a process for cleaning semiconductor fabrication equipment parts with non-metallic surfaces. The process optionally includes providing a semiconductor fabrication part with a non-metallic surface to be cleaned and applying a dilute aqueous solution to remove contamination from the non-metallic surface. The aqueous solution optionally includes dilute amounts of hydrofluoric acid, nitric acid and hydrogen peroxide. The dilute amounts would optionally be in the ranges of 0.5-1.5% wt. hydrofluoric acid, 0.1-0.5% wt. nitric acid and 1-10% wt. hydrogen peroxide.

Abstract: Embodiments of the present invention generally relate to a method and apparatus for ex-situ cleaning of a chamber component part. In one embodiment, a system for cleaning component parts in a cleaning chemistry is provided. The system comprises a wet bench set-up comprising a cleaning vessel assembly for holding one or more component parts to be cleaned during a cleaning process and a detachable cleaning cart detachably coupled with the cleaning vessel assembly for supplying one or more cleaning chemistries to the cleaning vessel assembly during the cleaning process.

Abstract: Residues are removed from a surface of a substrate processing component which has a polymer coating below the residues. In one version, the component surfaces are contacted with an organic solvent to remove the residues without damaging or removing the polymer coating. The residues can be process residues or adhesive residues. The cleaning process can be conducted as part of a refurbishment process. In another version, the residues are ablated by scanning a laser across the component surface. In yet another version, the residues are vaporized by scanning a plasma cutter across the surface of the component.

Abstract: In one aspect, a method of improving the performance of an electronic device manufacturing facility is provided, including the step of reducing the number of electronic device manufacturing component seasoning steps which are performed using production equipment, whereby the amount of electronic device manufacturing system downtime is reduced. Several other aspects are provided.

Abstract: Embodiments of the present invention generally relate to a method and apparatus for ex-situ cleaning of a chamber component part. In one embodiment, a system for cleaning component parts in a cleaning chemistry is provided. The system comprises a wet bench set-up comprising a cleaning vessel assembly for holding one or more component parts to be cleaned during a cleaning process and a detachable cleaning cart detachably coupled with the cleaning vessel assembly for supplying one or more cleaning chemistries to the cleaning vessel assembly during the cleaning process.

Abstract: In one aspect, a method of cleaning an electronic device manufacturing process chamber part is provided, including a) spraying the part with an acid; b) spraying the part with DI water; and c) treating the part with potassium hydroxide. Other aspects are provided.

Abstract: Embodiments of the present invention generally relate to a method and apparatus for ex-situ cleaning of a chamber component part. In one embodiment, a system for cleaning component parts in a cleaning chemistry is provided. The system comprises a wet bench set-up comprising a cleaning vessel assembly for holding one or more component parts to be cleaned during a cleaning process and a detachable cleaning cart detachably coupled with the cleaning vessel assembly for supplying one or more cleaning chemistries to the cleaning vessel assembly during the cleaning process.

Abstract: A method of fabricating a process chamber component having a textured surface with raised features. The method comprises providing a process chamber component having a surface, and forming a patterned resist layer on the process chamber component, the patterned resist layer having apertures that expose portions of the surface of the process chamber component therethrough. A textured surface having raised features is formed on the process chamber component by propelling grit particles with a gas that is pressurized to a pressure sufficiently high to cause the grit particles to erode and remove material from the surface.

Abstract: A method is provided for recovering a metal from electronic device deposition equipment including: providing deposition equipment wherein the deposition equipment is at least partially coated with a deposited metal; blasting the deposition equipment with a grit to remove at least some of the deposited metal to form a blasted grit and a removed metal; and separating at least some of the removed metal from the blasted grit to form a recovered metal.

Abstract: Described are methods of removing aluminum fluoride contaminants from aluminum, anodized aluminum, and sprayed ceramic surfaces. Hydrofluoric acid, long known to be effective at removing certain contaminants, has not been used to dissolve aluminum fluoride on aluminum-containing surfaces because the hydrofluoric acid strongly attacks such surfaces, and consequently damages sensitive components. Methods used in accordance with some embodiments remove aluminum fluoride using a mixture of hydrofluoric acid and one or more anhydrous acid. Suitable anhydrous acids include acetic acid.

Abstract: Described are methods and chemistries for preparing firepolished quartz parts for use in semiconductor processing. The quartz parts in need of preparation include newly manufactured parts as well as parts requiring refurbishment after previous use in semiconductor processing. The embodiments described avoid methods and chemistries that may damage the surfaces of the quartz parts and render the parts unfit for use in semiconductor processing. A method in accordance with one embodiment minimizes damage by limiting exposure of the quartz parts to hydrofluoric acid. A quartz part for use in semiconductor processing comprises a surface including a surface portion having a surface portion area to expose to a gas, wherein at least 95 percent of the surface portion area is free of defects and wherein the surface portion has less than E12 atoms per centimeter squared of aluminum.

Abstract: Described are methods and chemistries for preparing firepolished quartz parts for use in semiconductor processing. The quartz parts in need of preparation include newly manufactured parts as well as parts requiring refurbishment after previous use in semiconductor processing. The embodiments described avoid methods and chemistries that may damage the surfaces of the quartz parts and render the parts unfit for use in semiconductor processing. A method in accordance with one embodiment minimizes damage by limiting exposure of the quartz parts to hydrofluoric acid. A quartz part for use in semiconductor processing comprises a surface including a surface portion having a surface portion area to expose to a gas, wherein at least 95 percent of the surface portion area is free of defects and wherein the surface portion has less than E12 atoms per centimeter squared of aluminum.

Abstract: Described are cleaning benches and methods for removing contaminant layers from semiconductor process components using small volumes of hazardous liquids and minimizing cross-contamination between components from different deposition chambers. Components to be cleaned are stored within or supported by a dedicated cassette before they are placed in a receptacle of cleaning liquid. The cassette displaces a significant percentage of the receptacle's volume; consequently, only a relatively small volume of cleaning liquid is needed to fully submerge the component. In typical embodiments, the combined cassette and component displace a volume of liquid that is greater than the volume of liquid used to clean the component. The cleaning bench can include different chemical baths for different components. Cassettes dedicated for use with particular components can be keyed to particular receptacles.

Abstract: Described are methods, systems, and chemistries for removing layers of stubborn silicon and silicon-nitride contamination layers from the inside surfaces of such articles as deposition tubes. In such embodiments, a tube to be cleaned is gently rolled on it side while a portion the tube's interior surface is exposed to an etchant. The tube is only partially filled with etchant to reduce the requisite etchant volume, and the rolling motion evenly exposes the contaminated inner surface to the etchant.

Abstract: Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.

Abstract: Described are methods, systems, and chemistries for cleaning various components of semiconductor process equipment. A method in accordance with one embodiment cleans articles with differently contaminated interior and exterior surfaces by using those articles to separate a cleaning vessel into separate chambers, one chamber for the interior surface and one for the exterior surface. Different chemistries are then applied to the differently contaminated surfaces. This embodiment reduces the required volume of etchant, and consequently saves the cost, treatment, and disposal of toxic chemicals. One embodiment further reduces the requisite etchant volume using one or more volume-displacement elements that displace some of the etchant volume.

Abstract: Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.

Abstract: Described are cleaning methods and apparatus that minimize the volume of hazardous materials used and created when cleaning components, and further to minimize the possibility of cross-contamination between components from different deposition chambers. Components to be cleaned are stored within or supported by a dedicated cassette before they are placed in a receptacle of cleaning liquid. The cassette displaces a significant percentage of the receptacle's volume; consequently, only a relatively small volume of cleaning liquid is needed to fully submerge the component. In typical embodiments, the combined cassette and component displace a volume of liquid that is greater-than the volume of liquid used to clean the component. One embodiment of the invention reduces the requisite volume of cleaning solution using a number of liquid-displacing elements (e.g., balls) contained within a cleaning receptacle.

Abstract: Disclosed are systems and methods for removing stubborn contaminants, aluminum fluoride and aluminum chloride in particular, from components of semiconductor-processing equipment. One embodiment forces steam through small holes in a gas distribution plate to remove build up on the interior walls of the holes. A cleaning fixture disposed between the steam source and the gas distribution plate delivers the steam at increased pressures. The gas distribution plate can be immersed in water during cleaning to capture the exiting steam.