Abstract: This invention describes a Quantum NPS Photodetector (QNPSPD). A plurality of dispersed patterned Nanoporous Silicon island regions with sub 50 nm pore nc-pSi nanostructure are formed in a high resistivity Si substrate on the first side of a front illuminated QNPSPD device with each nc-pSi region surrounded along its perimeter by a contiguous interconnected p/n diode junction. The Quantum NPS Photodetector is characterized by enhanced responsivity in the spectral range of from about 0.2 um to about 1.1 um, low noise, and fast response time, and it can operate from 10 mV to about 180V. The QNPSPD photodetector can provide excellent imaging in the UV-VIS-NIR spectral range that is important for many applications including defense, homeland security, medical imaging, and night vision. The QNPSPD manufacturing method described is adaptable for low cost manufacturing and scalable to large size wafer diameters. Various embodiments of the Quantum NPS Photodetector and methods for its manufacturing are disclosed.