Patents Assigned to Quantum Peripherals Colorado, Inc.
  • Patent number: 5970603
    Abstract: A tool, and associated method, for batch processing the definition of air bearing surfaces on rows comprising a plurality of sliders is disclosed. The tool has a main body member having a length defining a y-axis direction, a width defining an x-axis direction, and a thickness defining a z-axis direction. The main body member has a top surface defining an upwardly facing z-axis base surface. The main body also defines a y-axis alignment reference surface, and an x-axis alignment reference surface. The rows are positioned on the tool for processing, where the upper surface of the platform engages the lower surface of the plurality of rows to provide proper z-axis positioning on the tool. The y-axis alignment reference engages one longitudinal side of an anchor row to provide proper y-axis positioning, and the x-axis alignment reference surface abuts the second end of the plurality of rows to provide proper x-axis positioning. The top surfaces of the rows lie in a common plane.
    Type: Grant
    Filed: March 24, 1998
    Date of Patent: October 26, 1999
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: Dan W. Quintana, Chris Broussalian, John Keil, Jr., Georgene Nielsen, Jorg Jemelka, Robert Chestnutt, William Trowbridge
  • Patent number: 5936813
    Abstract: A process for making a magnetic head including the steps of forming a first pole piece comprising magnetic material and depositing a gap-forming layer comprising nonmagnetic material over the first pole piece. A first patterned layer of uncrosslinked polymer is formed on the gap-forming layer. The first patterned layer is cured by electron irradiation at a temperature less than about 175 C. to crosslink the polymer. A conductive coil is formed on the cured first patterned layer and a second patterned layer of uncrosslinked polymer is formed over the conductive coil. The second patterned layer is cured by electron irradiation at a temperature less than about 175 C. to crosslink the polymer. A second pole piece layer of magnetic material is formed to complete the magnetic head.
    Type: Grant
    Filed: August 3, 1998
    Date of Patent: August 10, 1999
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: Young Keun Kim, Michael J. Jennison
  • Patent number: 5847904
    Abstract: A magnetoresistive ("MR") device incorporating an improved conductor geometry to provide enhanced magnetic stability by providing essentially uniform current flow through the device active region in order to effectively obviate the formation of undesired domain walls, particularly during read back operations. A pair of current conductors are provided in electrical contact with the magnetoresistive device and configured to provide current to the magnetoresistive device at an angle of less than 90.degree. to the easy axis.
    Type: Grant
    Filed: December 8, 1995
    Date of Patent: December 8, 1998
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventor: Shridhar Bharthulwar
  • Patent number: 5734531
    Abstract: Disclosed is an MR head, and the method of making the same, which has a pole/shield. In the preferred embodiment, the pole side of the pole/shield is constructed such that it has a length that is approximately equal to the length of the pole, and a shield side that is approximately the length of a shield. Through this construction, the MR element, which is disposed between the shield side and the shield, is fully shielded during a read operation. Additionally, the flux lines generated during a write operation approximate the length of the pole so that excessive fringing does not occur. As a result of the smaller flux lines generated between the pole and the pole side of the pole/shield, data may be more densely packed on the disk used in conjunction with the MR head.
    Type: Grant
    Filed: October 31, 1995
    Date of Patent: March 31, 1998
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: J. Lamar Nix, Robert E. Weinstein
  • Patent number: 5668688
    Abstract: A transducer includes a spin valve ("SV") structure comprising a pinned ferromagnetic layer adjoining a first end portion thereof and a freely rotating ferromagnetic layer adjoining an oppositely disposed second end portion thereof. First and second current conductors adjoin the first and second end portions of the spin valve structure respectively in a current perpendicular-to-the-plane configuration ("CPP"). In a particular embodiment disclosed herein, a differential CPP transducer includes a pair of SV structures having first and second current conductors with a common current conductor intermediate the SV structures.
    Type: Grant
    Filed: May 24, 1996
    Date of Patent: September 16, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: John West Dykes, Young Keun Kim
  • Patent number: 5658469
    Abstract: A method for forming a re-entrant photoresist lift-off profile for thin film device processing of particular utility in conjunction with self-aligned sputtered films, such as permanent magnet ("PM") films, for use in magnetoresistive ("MR") read heads as well as a device made thereby. Photoresist is patterned in a conventional manner upon the thin film layers overlying a suitable substrate and the photoresist is then exposed to a suitable developer resulting in photoresist regions having substantially vertical sidewalls. An electron beam, or other suitable energy source, is then utilized to cross-link (or render relatively insoluble) the upper portion of the positive tone resist image by accelerating a sufficient dose of electrons into the photoresist to a well controlled depth. A second electron beam is then distributed throughout the entire photoresist thickness to render the lower portion of it relatively more soluble in a developer.
    Type: Grant
    Filed: December 11, 1995
    Date of Patent: August 19, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventor: Michael J. Jennison
  • Patent number: 5639509
    Abstract: A flux enhanced data transducer and method for producing the same in conjunction with shared shields on MR read heads in which substantially between 500-2500 .ANG. of a relatively higher magnetic moment material is added to the upper surface of the shared shield, or bottom write head pole, prior to a magnetic flux containment ion milling operation utilizing the upper pole as a mask. The relatively higher magnetic moment flux enhancement layer may comprise CoNiFe, FeN or similar material which is deposited prior to the formation of the dielectric gap layer. The flux enhancement layer may then be selectively removed substantially surrounding the upper pole by means of a relatively brief ion milling process in which only on the order of 1.0 k.ANG. of the layer need be removed and during which only an insignificant amount of the material removed might be re-deposited on the sides of the upper pole.
    Type: Grant
    Filed: July 22, 1996
    Date of Patent: June 17, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventor: Terence D. Schemmel
  • Patent number: 5637235
    Abstract: A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.
    Type: Grant
    Filed: June 17, 1996
    Date of Patent: June 10, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: Young K. Kim, J. Lamar Nix
  • Patent number: 5634260
    Abstract: An improved magnetoresistive device and method for fabricating the same which results in improved Barkhausen noise suppression. A generally coplanar device is described having an MR structure conductive region longitudinally biased by opposing permanent magnet layers separated therefrom by a non-magnetic metal or dielectric separation layer. Significant reduction of the demagnetization energy near the MR-to-permanent magnet junction is achieved, particularly in the use of an elliptically shaped conductive region and the resultant generally coplanar device is readily fabricated and reproducible using a self-aligning process. The longitudinal bias technique described can be used in conjunction with all known transverse bias techniques.
    Type: Grant
    Filed: February 22, 1995
    Date of Patent: June 3, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: James L. Nix, Guy F. Ruse, Paul D. Reinholz, Anthony C. Helms, Daniel J. O'Connor
  • Patent number: 5608593
    Abstract: A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer and an active, top ferromagnetic layer separated by a thin nonmagnetic metal spacer layer. The active ferromagnetic layer and underlying spacer layer are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions overlying the active ferromagnetic layer.
    Type: Grant
    Filed: March 9, 1995
    Date of Patent: March 4, 1997
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: Young K. Kim, J. Lamar Nix
  • Patent number: 5573809
    Abstract: A soft adjacent layer biased magnetoresistive ("MR") device, and a method for producing the same, which incorporates a natural flux closure design utilizing coplanar thin film permanent magnets to stabilize the device while obviating induced domain walls in the magnetoresistive and soft adjacent layers ("SAL"). The device structure includes an SAL film and overlying magnetic spacer layer ("MSL") in conjunction with an MR film to produce an SAL biased magnetoresistive structure ("MRS") with the MR layer patterned to a shortened length with respect to the SAL and MSL layers. A non-magnetic metal or dielectric separation layer of on the order of 20-300 angstroms (".ANG.") is then deposited over the MSL layer and the sides of the MR layer followed by the deposition of permanent magnet layer portions substantially coplanar with the MR layer to produce a low energy equilibria device with high sensitivity and superior signal output.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: November 12, 1996
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: J. Lamar Nix, Guy F. Ruse
  • Patent number: 5532892
    Abstract: A soft adjacent layer biased magnetoresistive ("MR") device, and a method for producing the same, which incorporates a natural flux closure design utilizing coplanar thin film permanent magnets to stabilize the device while obviating induced domain walls in the magnetoresistive and soft adjacent layers ("SAL"). The device structure includes an SAL film and overlying magnetic spacer layer ("MSL") in conjunction with an MR film to produce an SAL biased magnetoresistive structure ("MRS") with the MR layer patterned to a shortened length with respect to the SAL and MSL layers. A non-magnetic metal or dielectric separation layer of on the order of 20-300 angstroms (".ANG.") is then deposited over the MSL layer and the sides of the MR layer followed by the deposition of permanent magnet layer portions substantially coplanar with the MR layer to produce a low energy equilibria device with high sensitivity and superior signal output.
    Type: Grant
    Filed: June 5, 1995
    Date of Patent: July 2, 1996
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: J. Lamar Nix, Guy F. Ruse
  • Patent number: 5485334
    Abstract: An improved magnetoresistive device and method for fabricating the same which results in improved Barkhausen noise suppression. A generally coplanar device is described having an MR structure conductive region longitudinally biased by opposing permanent magnet layers separated therefrom by a non-magnetic metal or dielectric separation layer. significant reduction of the demagnetization energy near the MR-to-permanent magnet junction is achieved, particularly in the use of an elliptically shaped conductive region and the resultant generally coplanar device is readily fabricated and reproducible using a self-aligning process. The longitudinal bias technique described can be used in conjunction with all known transverse bias techniques.
    Type: Grant
    Filed: February 22, 1996
    Date of Patent: January 16, 1996
    Assignee: Quantum Peripherals Colorado, Inc.
    Inventors: James L. Nix, Guy F. Ruse, Paul D. Reinholz, Anthony C. Helms, Daniel J. O'Connor