Abstract: The present invention provides a method for producing a group III-V nanocrystal composition, the method comprising forming a first mixture comprising a first indium-containing compound and/or a first gallium-containing compound, a first ligand and a first solvent, adding at least one pnictogen-containing compound to the first mixture, and heating the first mixture to a growth temperature in the range of 200° C. to 350° C.; and adding an oxide removal reagent and a composition comprising group III-V clusters to the first mixture at the growth temperature over a total growth time of at least 6 hours to provide the group III-V nanocrystal composition. The present invention also provides cuboctahedral group III-V nanocrystals, which may be formed by the method of the invention.

Abstract: The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.

Abstract: The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.

Abstract: The present invention provides the use of a lead (IV) containing compound to prepare a lead chalcogenide nanocrystal and a method for producing broadband lead chalcogenide nanocrystals in a low cost, size-controllable and scalable method, the method comprising contacting a lead (IV) containing compound with an organic acid and a chalcogen-containing reagent.