Abstract: A light-emitting diode (LED) packaging module includes a plurality of LED chips spaced apart from one another, an encapsulating layer that fills in a space among the LED chips, a light-transmitting layer disposed on the encapsulating layer, a wiring assembly disposed on and electrically connected to the LED chips, and an insulation component that covers the encapsulating layer and the wiring assembly. Each of the LED chips includes an electrode assembly including first and second electrodes. The light-transmitting layer includes a light-transmitting layer that has a light transmittance greater than that of the encapsulating layer.

Abstract: A light emitting diode (LED) package includes a substrate, a metal stage, at least one LED chip and a packaging material. The substrate has an super surface, and a lower surface opposite to the upper surface. The metal stage is formed on the upper surface of the substrate, and has a lumpy structure. The LED chip is mounted on the metal stage. The packaging material covers the LED chip, the metal stage and the substrate. The packaging material and the lumpy structure of the metal stage are engaged with each other.

Abstract: A light-emitting device includes a number (N) of light-emitting units, a number (a) of first metal pads and a number (b) of second metal pads. Each of the light-emitting units includes a number (n) of light-emitting chips each having two distinct terminals, where N and n are integers and N>1, n>?3. The numbers (a) and (b) are integers and a>1, b>1, and the terminals of each of the light-emitting chips are electrically connected to a unique combination of one of the number (a) of first metal pads and a number (b) of second metal pads, respectively. The numbers (N), (n), (a) and (b) satisfy the equation: a*b=n*N.

Abstract: A light-emitting diode (LED) packaging module includes light-emitting units arranged in an array having m row(s) and n column(s), an encapsulating layer, and a wiring assembly, where m and n each independently represents a positive integer. Each of the light-emitting units includes LED chips each including a chip first surface, a chip second surface, a chip side surface, and an electrode assembly disposed on the chip second surface. The encapsulating layer covers the chip side surface and fills a space among the LED chips. The wiring assembly is disposed on the chip second surface and is electrically connected to the electrode assembly.

Abstract: Disclosed are a light emitting diode element, a manufacturing method thereof, and a light emitting apparatus. In the light emitting diode element, a surface of a first bond layer formed on an epitaxial structure is a smooth surface without height difference. Further, a surface roughness thereof may be less than 10 nm. Therefore, when the substrate and epitaxial structure are bonded, the two bond layers are plane-to-plane bonded, and no defect such as voids occurs to ensure the bonding strength. Thereby, the bonding stability between the substrate and the epitaxial structure is ensured, and the yield of the device is improved. At the same time, there is no similar defect such as voids, which facilitates to reduce the voltage of the device and improve the photoelectric efficiency of the device.

Abstract: The disclosure relates to a technical field of a semiconductor optoelectronic device, and more particularly, to a light emitting diode and a light emitting device. To solve an issue that a metal layer of the existing light emitting diode has insufficient adhesion on an insulation layer, the light emitting diode includes a semiconductor epitaxial stack layer including a first conductive semiconductor layer, a light emitting layer, and a second conductive semiconductor layer sequentially stacked and disposed; an interface transition layer located above the semiconductor epitaxial stack layer; the interface transition layer including an insulation metal oxide or a stack layer of the insulation metal oxides; a first insulation layer disposed between the interface transition layer and the semiconductor epitaxial stack layer; the metal layer covering a portion of a surface of the interface transition layer and electrically connected to the semiconductor epitaxial stack layer.

Abstract: A micro light-emitting diode and a preparation method therefor, a micro light-emitting element and a display. The micro light-emitting diode comprises an epitaxial layer and a dielectric layer, wherein the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are arranged in sequence, and has a first surface and a second surface which are arranged opposite each other, the first semiconductor layer being located on the side of the epitaxial layer close to the first surface; the epitaxial layer is configured with a mesa, and the mesa is exposed from the first semiconductor layer and faces the second surface; and the dielectric layer covers the first surface and at least part of a side wall of the epitaxial layer, and the height H1 of the dielectric layer on the side wall of the epitaxial layer is less than the height of the mesa.

Abstract: Disclosed is a light-emitting diode chip. A first electrode and a second electrode of the light-emitting diode chip face towards a front side. A back side of a first conduction layer is directly connected to a front side of a base. A portion of the first conduction layer is at least exposed from the front side to be used for the arrangement of the first electrode. A portion of a second conduction layer is at least exposed from the front side to be used for the arrangement of the second electrode. The exposed first conduction layer and the exposed second conduction layer are of equal height. An insulating layer extending from a recess covers a back side of the second conductive layer.

Abstract: A light emitting diode includes a substrate and a semiconductor light emitting stack layer. The semiconductor light emitting stack layer is disposed on the substrate, and the substrate has four sidewalls, an upper surface, and a lower surface. At least one sidewall is provided with a first laser dotting region and a second laser dotting region. The first laser dotting region includes first laser dots, and the second laser dotting region includes second laser dots. A stress crack is present between the first laser dotting region and the second laser dotting region. A first distance D1 is present between the first laser dotting region and the stress crack, a second distance D2 is present between the second laser dotting region and the stress crack, and 0.7D2<D1<1.3D2.

Abstract: A light-emitting diode includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack has a first surface and a second surface opposite to each other. The DBR structure is disposed on one of the first surface and the second surface of the semiconductor light-emitting stack, and includes at least one set of first light-transmitting layers and at least one set of second light-transmitting layers stacked on each other in the first direction. The first light-transmitting layers has interface roughness greater than that of the second light-transmitting layers.

Abstract: A light-emitting packaging device includes a substrate, a light-emitting diode (LED) chip, an optical element, and a covering member. The LED chip is disposed on the substrate. The optical element is spacedly disposed on the LED chip opposite to the substrate, and has an upper surface and a lower surface that are respectively distal from and proximal to the LED chip. The covering member is made from a fluorine-containing resin, and is configured to cover the LED chip and at least a portion of the upper surface of the optical element.

Abstract: The disclosure relates to the field of semiconductor manufacturing technology, and in particular to a vertical-type light-emitting diode, which includes a substrate, a semiconductor stack layer and an insulation implant layer. The semiconductor stack layer is disposed on the substrate, and the semiconductor stack layer includes the first semiconductor layer, the light-emitting layer and the second semiconductor layer that are sequentially stacked on the substrate. The insulation implant layer is formed in the semiconductor stack layer to divide the semiconductor stack layer into at least two individual dies. By forming the insulation implant layer in the semiconductor stack layer, it is possible to achieve small spacing between dies and allow them to be insulated from each other without the need to create trenches or use PI adhesive. It is possible to ensure the photoelectric quality of the vertical-type light-emitting diodes and make the surface of the vertical-type light-emitting diodes flatter.

Abstract: A light-emitting device includes a lead frame, a light-emitting diode (LED) chip, and an encapsulant. The LED chip is disposed on the lead frame, and includes a substrate, a semiconductor light-emitting unit disposed on a surface of the substrate, and a first electrode and a second electrode, which are disposed on the surface of the substrate, and which are located outwardly of the semiconductor light-emitting unit. The first and second electrodes are electrically connected to a lower surface of the semiconductor light-emitting unit, and are respectively connected to a first wiring bonding region and a second wiring bonding region on the lead frame. The encapsulant encapsulates the LED chip on the lead frame.

Abstract: The present invention provides a white light LED package structure and a white light source system, which includes a substrate, an LED chip, and a wavelength conversion material layer. The peak emission wavelength of the LED chip is between 400 nm and 425 nm; the peak emission wavelength of the wavelength conversion material layer is between 440 nm and 700 nm, and the wavelength conversion material layer absorbs light emitted from the LED chip and emits a white light source; and the emission spectrum of the white light source is set as P(?), the emission spectrum of a blackbody radiation having the same color temperature as the white light source is S(?), P(?max) is the maximum light intensity within 380-780 nm, S(?max) is the maximum light intensity of the blackbody radiation within 380-780 nm, D(?) is a difference between the spectrum of the white light LED and the spectrum of the blackbody radiation, and within 510-610 nm, the white light source satisfies: D(?)=P(?)/P(?max)?S(?)/S(?max), ?0.

Abstract: The invention discloses a light-emitting diode and a light-emitting device. The light-emitting diode includes a semiconductor epitaxial stack having first and second surfaces opposite to each other and including a first-type semiconductor layer, an active layer, and a second-type semiconductor layer stacked in sequence in a direction from the first surface to the second surface. The active layer includes n periods of quantum well structure, and each period of quantum well structure includes a well layer and a barrier layer deposited sequentially. A first spacer layer is disposed between the first-type semiconductor layer and the active layer, and a ratio of a thickness (nm) of the first spacer layer to a current density (A/cm2) of the light-emitting diode ranges from 0 to 10. In the invention, the thickness of the first spacer layer is adjusted according to the current density of the light-emitting diode to improve the luminous efficiency of the light-emitting diode.

Abstract: A light-emitting diode and a manufacturing method thereof are provided. The manufacturing method includes following steps. First, an LED wafer is provided. The LED wafer includes a substrate and a light-emitting semiconductor stacking structure positioned on the surface of the substrate. The light-emitting semiconductor stacking structure includes a first type semiconductor layer, an active layer, and a second type semiconductor layer from a side of the substrate. Second, dicing lanes are defined on the upper surface of the LED wafer. Third, dicing is performed along the dicing lanes of the substrate using a laser. The laser is focused on the lower surface of the substrate to form a surface hole and focused inside the substrate to form an internal hole. The diameter of the surface hole is greater than the diameter of the internal hole. Fourth, the LED wafer is separated into LED chips along the dicing lanes.

Abstract: Disclosed is a light-emitting device which includes a light-emitting element and a wavelength conversion layer, and light of a first wavelength emitted by the light-emitting element is converted into light of a second wavelength and light of a third wavelength through the wavelength conversion layer. The light-emitting element includes a first contact layer, and the reflectivity of the first contact layer to the third wavelength is greater than 85%, so that the reflectivity of the light of the second wavelength and the light of the third wavelength converted by the wavelength conversion layer and reflected to the surface of the light-emitting element may be increased, and the white light conversion efficiency and the light extraction efficiency of the light-emitting device are improved.

Abstract: A flip-chip light emitting diode includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The light emitting layer is located between the first semiconductor layer and the second semiconductor layer. The first electrode is located on the epitaxial structure and is electrically connected to the first semiconductor layer. The second electrode is located on the epitaxial structure and is electrically connected to the second semiconductor layer. The first electrode and/or the second electrode is a multilayer metal structure. The multilayer metal structure includes a metal reflective layer, a first barrier layer, and a conductive metal layer stacked in sequence on the first semiconductor layer. A thickest layer in the multilayer metal structure is the conductive metal layer, and the conductive metal layer is an Al layer.

Abstract: A flip-chip light emitting diode (LED) includes: a sapphire substrate having an edge; an epitaxial layer over the substrate, wherein the epitaxial layer comprises: a first semiconductor layer, a second semiconductor layer, and a light emitting layer between the first semiconductor layer and the second semiconductor layer, wherein the epitaxial layer is divided into an epitaxial bulk layer and a barrier structure; and an insulating layer over the epitaxial bulk layer, wherein a portion of the insulating layer that covers a sidewall of the epitaxial bulk layer is separated from the edge of the substrate by the barrier structure.

Abstract: A light emitting device includes a package substrate, a patterned conductive layer, an LED chip, and an encapsulation layer. The patterned conductive layer is located on top of the package substrate, and has an isolation region that separates the patterned conductive layer into a first region and a second region. The LED chip is located on top of the patterned conductive layer. The encapsulation layer covers the LED chip and the patterned conductive layer. The encapsulation layer forms an optical structure that corresponds to the LED chip in position and that has a lateral curved surface covering a side wall of the LED chip. When light emitted from the LED chip radiates through the optical structure, the light emitting device has a viewing angle exceeding 120°.