Abstract: This invention concerns an electronic device for the control and readout of the electron or hole spin of a single dopant in silicon. The device comprises a silicon substrate in which there are one or more ohmic contact regions. An insulating region on top of the substrate. First and second barrier gates spaced apart to isolate a small region of charges to form an island of a Single Electron Transistor (SET). A third gate over-lying both the first and second barrier gates, but insulated from them, the third gate being able to generate a gate-induced charge layer (GICL) in the beneath it. A fourth gate in close proximity to a single dopant atom, the dopant atom being encapsulated in the substrate outside the region of the GICL but close enough to allow spin-dependent charge tunnelling between the dopant atom and the SET island under the control of gate potentials, mainly the fourth gate.
Type:
Grant
Filed:
February 11, 2009
Date of Patent:
August 13, 2013
Assignee:
Qucor Pty Limited
Inventors:
Andrea Morello, Andrew Dzurak, Hans-Gregor Huebl, Robert Graham Clark, Laurens Henry Willems Van Beveren, Lloyd Christopher Leonard Hollenberg, David Normal Jamieson, Christopher Escott