Abstract: The invention concerns a method for manufacturing glass substrates with reduced internal reflectance by ion implantation, comprising ionizing a source gas of N2, O2, Ar, and/or He so as to form a mixture of single charge and multicharge ions of N, O, Ar, and/or He forming a beam of single charge and multicharge ions of N, O, Ar, and/or He, by accelerating with an acceleration voltage comprised between 15 kV and 60 kV and an ion dosage comprised between 1017 ions/cm2 and 1018 ions/cm2. The invention further concerns glass substrates having reduced internal reflectance, comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.