Patents Assigned to QUERTECH INGENIERIE
  • Patent number: 11066329
    Abstract: A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and ?2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
    Type: Grant
    Filed: March 13, 2017
    Date of Patent: July 20, 2021
    Assignees: AGC GLASS EUROPE, AGC GLASS COMPANY NORTH AMERICA, AGC Inc., QUERTECH INGENIERIE
    Inventors: Benjamine Navet, Pierre Boulanger, Denis Busardo
  • Publication number: 20200325067
    Abstract: A method for manufacturing neutral color antireflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 20 kV and 25 kV and setting the ion dosage at a value between 6×1016 ions/cm2 and ?5.00×1015×A/kV+2.00×1017 ions/cm2. A neutral color antireflective glass substrates including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.
    Type: Application
    Filed: March 13, 2017
    Publication date: October 15, 2020
    Applicants: AGC GLASS EUROPE, AGC GLASS COMPANY NORTH AMERICA, AGC Inc., QUERTECH INGENIERIE
    Inventors: Benjamine NAVET, Pierre BOULANGER, Denis BUSARDO
  • Patent number: 10703674
    Abstract: The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
    Type: Grant
    Filed: October 21, 2015
    Date of Patent: July 7, 2020
    Assignees: AGC GLASS EUROPE, AGC Inc., QUERTECH INGENIERIE
    Inventors: Benjamine Navet, Pierre Boulanger, Lionel Ventelon, Denis Busardo, Frederic Guernalec
  • Publication number: 20190161403
    Abstract: A method for manufacturing blue reflective glass substrates by ion implantation, the method including ionizing a N2 source gas so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N by accelerating with an acceleration voltage A between 15 kV and 35 kV and a dosage D between ?9.33×1015×A/kV+3.87×1017 ions/cm2 and 7.50×1017 ions/cm2. A blue reflective glass substrate including an area treated by ion implantation with a mixture of simple charge and multicharge ions according to the method.
    Type: Application
    Filed: March 13, 2017
    Publication date: May 30, 2019
    Applicants: AGC GLASS EUROPE, AGC GLASS COMPANY NORTH AMERICA, AGC Inc., QUERTECH INGENIERIE
    Inventors: Benjamine NAVET, Pierre BOULANGER, Denis BUSARDO
  • Publication number: 20190161404
    Abstract: A method for manufacturing antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, or O2, ionizing the source gas so as to form a mixture of single charge and multicharge ions of N, or O, forming a beam of single charge and multicharge ions of N, or O by accelerating with an acceleration voltage A between 13 kV and 40 kV and setting the ion dosage at a value between 5.56×1014×A/kV+4.78×1016 ions/cm2 and ?2.22×1016×A/kV+1.09×1018 ions/cm2, as well as antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
    Type: Application
    Filed: March 13, 2017
    Publication date: May 30, 2019
    Applicants: AGC GLASS EUROPE, AGC GLASS COMPANY NORTH AMERICA, AGC Inc., QUERTECH INGENIERIE
    Inventors: Benjamine NAVET, Pierre BOULANGER, Denis BUSARDO
  • Publication number: 20190119154
    Abstract: The invention concerns a method for manufacturing glass substrates with reduced internal reflectance by ion implantation, comprising ionizing a source gas of N2, O2, Ar, and/or He so as to form a mixture of single charge and multicharge ions of N, O, Ar, and/or He forming a beam of single charge and multicharge ions of N, O, Ar, and/or He, by accelerating with an acceleration voltage comprised between 15 kV and 60 kV and an ion dosage comprised between 1017 ions/cm2 and 1018 ions/cm2. The invention further concerns glass substrates having reduced internal reflectance, comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
    Type: Application
    Filed: March 13, 2017
    Publication date: April 25, 2019
    Applicants: AGC GLASS EUROPE, AGC GLASS COMPANY NORTH AMERICA, ASAHI GLASS CO LTD, QUERTECH INGÉNIERIE
    Inventors: Benjamine NAVET, Pierre BOULANGER
  • Publication number: 20190119155
    Abstract: The invention concerns a method for manufacturing heat treatable antireflective glass substrates by ion implantation, comprising selecting a source gas of N2, O2, or Ar, ionizing the source gas so as to form a mixture of single charge and multicharge ions of Ar, N, or O, forming a beam of single charge and multicharge ions of Ar, N, or O by accelerating with an acceleration voltage comprised between 15 kV and 60 kV and setting the ion dosage at a value comprised between 7.5×1016 and 7.5×1017 ions/cm2. The invention further concerns heat treatable and heat treated antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
    Type: Application
    Filed: March 13, 2017
    Publication date: April 25, 2019
    Applicants: AGC GLASS EUROPE, AGC GLASS COMPANY NORTH AMERICA, AGC Inc., QUERTECH INGENIERIE
    Inventors: Benjamine NAVET, Pierre BOULANGER
  • Publication number: 20190092683
    Abstract: The invention concerns a method for manufacturing scratch-resistant antireflective glass substrates by ion implantation, comprising ionizing a source gas of N2 so as to form a mixture of single charge and multicharge ions of N, forming a beam of single charge and multicharge ions of N, by accelerating with an acceleration voltage comprised between 20 kV and 30 kV and an ion dosage comprised between 5×1016 ions/cm2 and 1017 ions/cm2. The invention further concerns scratch-resistant antireflective glass substrates comprising an area treated by ion implantation with a mixture of simple charge and multicharge ions according to this method.
    Type: Application
    Filed: March 13, 2017
    Publication date: March 28, 2019
    Applicants: AGC GLASS EUROPE, AGC GLASS COMPANY NORTH AMERICA, AGC Inc., QUERTECH INGENIERIE
    Inventors: Benjamine NAVET, Pierre BOULANGER, Denis BUSARDO
  • Publication number: 20170334775
    Abstract: The invention concerns a process for increasing the scratch resistance of a glass substrate by implantation of simple charge and multicharge ions, comprising maintaining the temperature of the area of the glass substrate being treated at a temperature that is less than or equal to the glass transition temperature of the glass substrate, selecting the ions to be implanted among the ions of Ar, He, and N, setting the acceleration voltage for the extraction of the ions at a value comprised between 5 kV and 200 kV and setting the ion dosage at a value comprised between 1014 ions/cm2 and 2.5×1017 ions/cm2.The invention further concerns glass substrates comprising an area treated by implantation of simple charge and multicharge ions according to this process and their use for reducing the probability of scratching on the glass substrate upon mechanical contact.
    Type: Application
    Filed: October 21, 2015
    Publication date: November 23, 2017
    Applicants: AGC GLASS EUROPE, ASAHI GLASS CO LTD, QUERTECH INGENIERIE
    Inventors: Benjamine NAVET, Pierre BOULANGER, Lionel VENTELON, Denis BUSARDO, Frederic GUERNALEC
  • Publication number: 20130115449
    Abstract: A method of grafting monomers (M) in a deep layer (1) in an organic material by using an ion beam (X), wherein the ion dose per unit area is selected so as to be in the range of 1012 ions/cm2 to 1018 ions/cm2 so as to create a reservoir of free radicals (1) within a large thickness in the range 0 nm to 3000 nm. Hydrophilic and/or hydrophobic and/or antibacterial monomers (M) are grafted in the reservoir of free radicals (1). Organic materials with hydrophobic, hydrophilic, and/or antibacterial properties that are effective for long-term use are thus advantageously obtained.
    Type: Application
    Filed: July 1, 2011
    Publication date: May 9, 2013
    Applicant: QUERTECH INGENIERIE
    Inventor: Denis Busardo
  • Publication number: 20130112553
    Abstract: A treatment method for treating at least one surface of a solid polymer part wherein multi-energy ions X+ and X2+ are implanted simultaneously, where X is the atomic symbol selected from the list constituted by helium (He), nitrogen (N), oxygen (O), neon (Ne), argon (Ar), krypton (Kr), and xenon (Xe), and wherein the ratio RX, where RX=X+/X2+, with X+ and X2+ expressed as atomic percentages, is less than or equal to 100, for example less than 20. This results in very significant reductions in the surface resistivity of the parts treated in this way, the appearance of antistatic properties or of electrostatic charge dissipation properties. By way of example, the ions X+ and X2+ are supplied by an ECR source.
    Type: Application
    Filed: July 1, 2011
    Publication date: May 9, 2013
    Applicant: QUERTECH INGENIERIE
    Inventors: Denis Busardo, Frédéric Guernalec
  • Publication number: 20110318576
    Abstract: The invention relates to a method for treating at least one surface of a solid elastomer part using helium ions. According to the invention, multi-energy ions He+ and He2+ are implanted simultaneously, and the ratio RHe, where RHe=HeVHe2+ with He+ et He2+ expressed in atomic percentage, is less than or equal to 100, for example less than 20, resulting in very significant reductions in the frictional properties of parts treated in this way. The He+ and He2+ ions are supplied, for example, by an ECR source.
    Type: Application
    Filed: March 5, 2010
    Publication date: December 29, 2011
    Applicant: QUERTECH INGENIERIE
    Inventors: Denis Busardo, Frederic Guernalec
  • Publication number: 20110236592
    Abstract: The present invention relates to a method for treating a metal element subjected to an ion beam, where: the ions of the beam are selected from among boron, carbon, nitrogen, and oxygen; the ion acceleration voltage, greater than or equal to 10 kV, and the power of the beam, between 1 W and 10 kW, as well as the ion load per surface unit are selected so as to enable the implantation of ions onto an implantation area with a thickness eI of 0.05 ?m to 5 ?m, and also enable the diffusion of ions into an implantation/diffusion area with a thickness eI+eP, of 0.1 ?m to 1,000 ?m; the temperature TZF of the area of the metal element located under the implantation/diffusion area is less than or equal to a threshold temperature TSD. In this manner, metal surfaces having remarkable mechanical characteristics are advantageously produced.
    Type: Application
    Filed: November 30, 2009
    Publication date: September 29, 2011
    Applicant: QUERTECH INGENIERIE
    Inventor: Denis Busardo
  • Publication number: 20100187445
    Abstract: The invention relates to a method for treating a metal deposit to reduce or eliminate the porosity thereof by bombarding the same with an ion source. The source is, for example, an electron cyclotron resonance (RCE) source. The metal can be gold. The ion bombardment has the effect of sealing the porosity of the metal deposit according to the type, energy, amount and angle of incidence of the ions.
    Type: Application
    Filed: September 11, 2008
    Publication date: July 29, 2010
    Applicant: QUERTECH INGENIERIE
    Inventor: Denis Busardo