Abstract: In one embodiment, the present invention relates to a method of processing a semiconductor structure, involving the steps of providing the semiconductor structure having a patterned resist thereon; stripping the patterned resist from the semiconductor structure, wherein an amount of carbon containing resist debris remain on the semiconductor structure; and contacting the semiconductor structure with ozone thereby reducing the amount of carbon containing resist debris thereon.
Type:
Application
Filed:
January 31, 2000
Publication date:
August 2, 2001
Applicant:
R. Subramanian
Inventors:
Ramkumar Subramanian, Khoi A. Phan, Bharath Rangarajan, Bhanwar Singh, Sanjay K. Yedur, Bryan K. Choo