Patents Assigned to Radiant Technology Co.
  • Publication number: 20100233063
    Abstract: The present invention discloses a method for manufacturing a silicon material with high purity, and the method comprises the following steps of: selecting high purity quartz as a raw material; cleaning and comminuting the quartz; choosing the particle size of the quartz between 20 mm and 80 mm by an optical analyzer; purifying the quartz; melting the quartz in a metallurgical furnace; proceeding carbothermal reduction and post-refining to the quartz so as to obtain liquid silicon; draining the liquid silicon into a ladle through a tap hole of the metallurgical furnace; removing impurities of the liquid silicon in the ladle by Moist reduction Gas Blowing and Slag Treating; pouring the liquid silicon into a casting area of a crystal growth furnace; proceeding Directional Solidification to the liquid silicon in the casting area so as to obtain a solid silicon material.
    Type: Application
    Filed: November 10, 2009
    Publication date: September 16, 2010
    Applicant: Radiant Technology Co.
    Inventor: Hsien-Chung Chou
  • Patent number: D912638
    Type: Grant
    Filed: March 6, 2019
    Date of Patent: March 9, 2021
    Assignee: SHENZHEN RADIANT TECHNOLOGY CO., LTD
    Inventor: Xiaojuan Liao