Patents Assigned to Radiation Application Development Association
  • Patent number: 5721293
    Abstract: A fluoropolymer film or powder is brought into contact with a carboxylic acid and their surface is irradiated with ultraviolet light so that alkyl and other organic radicals derived from the carboxylic acid are introduced into the irradiated part, thereby imparting chemical affinity such as oleophilicity to the film or powder surface.
    Type: Grant
    Filed: October 31, 1995
    Date of Patent: February 24, 1998
    Assignees: Japan Atomic Energy Research Institute of Tokyo, Gunze Ltd. of Kyoto, Radiation Application Development Association of Ibaraki-ken
    Inventors: Nobuyuki Ichinose, Shunichi Kawanishi, Atsushi Okada, Shun'ichi Sugimoto
  • Patent number: 5419968
    Abstract: The invention provides surface-modified hydrophilic fluororesin moldings. The surface of a fluororesin molding is at least partly hydrophilized by irradiating at least part of the fluororesin molding with ultraviolet laser light not longer than 400 nm in wavelength in a state such that the molding is in contact with gas-treated water prepared by introducing into water a gas such as hydrogen gas, nitrogen gas or a rare gas or with some other specific aqueous liquid. The thus-obtained fluororesin moldings are suited for use, for example, as materials of artificial blood vessels excellent in antithrombotic property, and contact lenses free of modification-due discoloration. Further, they are expected to find a wider range of application where their performance characteristics are to be utilized.
    Type: Grant
    Filed: February 4, 1994
    Date of Patent: May 30, 1995
    Assignees: Gunze Limited, Japan Atomic Energy Research Institute, Radiation Application Development Association
    Inventors: Atsushi Okada, Yuichi Shimizu, Shunichi Kawanishi, Masanobu Nishii, Shunichi Sugimoto
  • Patent number: 5362525
    Abstract: A process for modifying surfaces of fluorine resins including irradiating an ultraviolet laser beam on the surfaces in the presence of an inorganic silicon compound. The inorganic silicon compound could be a silicate, silicon oxide, silicon nitride, or silicon carbide.
    Type: Grant
    Filed: December 7, 1993
    Date of Patent: November 8, 1994
    Assignees: Kurashiki Boseki Kabushiki Kaisha, Japan Atomic Energy Research Institute, Radiation Application Development Association
    Inventors: Masanobu Nishii, Yuichi Shimizu, Shunichi Kawanishi, Shunichi Sugimoto, Tadaharu Tanaka, Yosuke Eguchi