Abstract: A system for characterizing a semiconductor sample is disclosed. The system comprises a measurement subsystem, a data analysis subsystem, and a statistical analysis subsystem coupled to each other via an interconnection. The measurement subsystem excites a semiconductor sample by shining light on one or more points in the semiconductor sample to generate electron hole pairs, which creates a change in conductivity of the semiconductor sample. The measurement subsystem measures one or more voltage decay curves corresponding to the one or more points in the semiconductor sample based on the changes in conductivity, and transmits the measured voltage decay curves to the data analysis subsystem. The data analysis subsystem extracts one or more normalized decay curves from the transmitted measured voltage decay curves, which the data analysis subsystem then transmits to the statistical analysis subsystem. The statistical analysis subsystem analyzes the transmitted normalized decay curves.

Abstract: A system for characterizing a semiconductor sample is disclosed. The system comprises a measurement subsystem, a data analysis subsystem, and a statistical analysis subsystem coupled to each other via an interconnection. The measurement subsystem excites a semiconductor sample by shining light on one or more points in the semiconductor sample to generate electron hole pairs, which creates a change in conductivity of the semiconductor sample. The measurement subsystem measures one or more voltage decay curves corresponding to the one or more points in the semiconductor sample based on the changes in conductivity, and transmits the measured voltage decay curves to the data analysis subsystem. The data analysis subsystem extracts one or more normalized decay curves from the transmitted measured voltage decay curves, which the data analysis subsystem then transmits to the statistical analysis subsystem. The statistical analysis subsystem analyzes the transmitted normalized decay curves.

Abstract: A method for characterizing a semiconductor sample, said method comprising: shining light on one or more points in said semiconductor sample; measuring one or more voltage decay curves corresponding to said shining of light on said one or more points in said semiconductor sample; extracting one or more intermediate voltage decay curves corresponding to one or more measured voltage decay curves; obtaining one or more normalized decay curves corresponding to one or more intermediate voltage decay curves, each of the said one or more normalized decay curves corresponding to one or more discrete estimates of survival functions; and analyzing said obtained one or more normalized decay curves, said analyzing comprising obtaining one or more discrete estimates of the probability of recombination corresponding to the one or more normalized decay curves, and computing one or more summary statistics corresponding to each of said obtained one or more discrete estimates.