Abstract: The present invention discloses a method and apparatus for purifying ultra-high purity hydrogen fluoride, which purify it through a continuous distillation process by putting crude hydrogen fluoride instead of hydrogen fluoride into a multi-stage distillation column as it is, and remove impurities in hydrogen fluoride through a contact with fluorine gas having the concentration of the F2 gas automatically controlled depending on the content of arsenic fluoride that is an impurity.

Abstract: The present disclosure relates to a method for producing high-purity phosphoric acid through a quantum behavior control, and more particularly, to a method for producing high-purity phosphoric acid capable of obtaining high-purity phosphoric acid from low-grade phosphoric acid economically and industrially by obtaining phosphoric acid crystals by, using a temperature difference between inner and outer jackets of a cooling device, controlling crystal growth position and rate of the phosphoric acid crystals through changes in the molecular or quantum behaviors of impurities in phosphoric acid, thereby suppressing a phenomenon of impurities being trapped inside the phosphoric acid crystals.

Abstract: The present disclosure relates to a method for producing high-purity phosphoric acid from low-purity phosphoric acid by forming pure phosphoric acid crystals using crystallization purification through quantum coupling of phosphoric acid. In particular, the present disclosure relates to a method for producing phosphoric acid capable of obtaining high-purity phosphoric acid from low-grade phosphoric acid economically and industrially by obtaining pure crystals from a phosphoric acid raw material containing a large amount of impurities through activating quantum coupling of phosphoric acid at a temperature above zero (0° C. or higher).

Abstract: The present disclosure relates to a method for producing high-purity phosphoric acid through a quantum behavior control, and more particularly, to a method for producing high-purity phosphoric acid capable of obtaining high-purity phosphoric acid from low-grade phosphoric acid economically and industrially by obtaining phosphoric acid crystals by, using a temperature difference between an introduced phosphoric acid raw material and a cooling device, controlling crystal growth position and rate of the phosphoric acid crystals through changes in the molecular or quantum behaviors of phosphoric acid, water molecules and impurities in the phosphoric acid raw material to suppress a phenomenon of impurities being trapped inside the phosphoric acid crystals, and melting some of the formed phosphoric acid crystals through additionally introducing a high-temperature phosphoric acid raw material to remove the impurities trapped inside the crystals.

Abstract: The present disclosure relates to a method for preparing chelatable EDDHA, and more particularly, to a preparation method capable of preparing high-purity chelatable EDDHA with an excellent yield.

Abstract: The present invention discloses a method and apparatus for purifying ultra-high purity hydrogen fluoride, which purify it through a continuous distillation process by putting crude hydrogen fluoride instead of hydrogen fluoride into a multi-stage distillation column as it is, and remove impurities in hydrogen fluoride through a contact with fluorine gas having the concentration of the F2 gas automatically controlled depending on the content of arsenic fluoride that is an impurity.

Abstract: In a method of forming a pattern using a composition for removing photoresist, a layer is formed on a substrate, and then a photoresist pattern is formed on the layer. A portion of the layer exposed by the photoresist pattern is etched using the photoresist pattern as an etching mask to form the pattern on the substrate. Then, the photoresist pattern is removed using the composition including hydroxylamine, an alkanolamine-based compound, a morpholine-based compound, a polar solvent, a corrosion preventing agent, and water. The composition may effectively remove a photoresist pattern and etched residues without damaging the substrate and/or the pattern including metal, nitride, oxide and/or metal nitride.