Abstract: The nonvolatile memory device includes a memory cell having a transistor in which an insulating isolation layer is formed in a channel region. The nonvolatile memory device includes a metal-oxide-semiconductor (MOS) transistor as a basic component. An insulating isolation layer is formed in at least a channel region, and a gate insulating layer includes an insulating layer or a variable resistor and serves as a data storage. A gate includes a metal layer formed in a lower portion thereof. First source and drain regions are lightly doped with a dopant, and second source and drain regions are heavily doped with a dopant.

Abstract: A programmable non-volatile memory including a memory cell includes a transistor acting as an anti-fuse and two diodes for access. The memory cell that can store two bits and includes a transistor acting as an anti-fuse and two diodes for access, wherein the cell transistor includes: the source electrode formed by a metal; the first diode as the source region contact structure; the drain electrode formed by a metal; and the second diode as the drain region contact structure wherein the cell transistor, the oxide layer between the source area and the gate is the first anti-fuse the first storage; the oxide layer between the drain area and the gate is the second anti-fuse the second storage; the two diodes are connected in series to access the two anti-fuses.

Abstract: A highly integrated programmable non-volatile memory and a manufacturing method thereof are provided. More particularly, a memory device including an antifuse and a diode, or a variable resistor and a diode, an operation method thereof, and a manufacturing method of a plurality of memory cells capable of increasing the integration density by utilizing a vertical space are provided. The highly integrated programmable non-volatile memory includes first stepped cells and second stepped cells formed to have different heights. The first stepped cells are formed on a horizontal plane with a high height, and the second stepped cells are formed on a horizontal plane with a low height.