Patents Assigned to RASIRO, Inc.
  • Hydrogen peroxide plasma etch of ashable hard mask
    Patent number: 12057320
    Abstract: The techniques described herein relate to a method for etching an ashable hard mask (AHM) on a substrate. The method includes forming a plasma from a gas mixture, wherein the gas mixture includes hydrogen peroxide vapor with a concentration greater than 0.1% by volume, wherein the concentration of the hydrogen peroxide vapor in the gas mixture is substantially stable over time, and wherein the plasma comprises hydrogen peroxide species. The method further includes etching the AHM by exposing the AHM to the plasma.
    Type: Grant
    Filed: September 22, 2023
    Date of Patent: August 6, 2024
    Assignee: RASIRO, Inc.
    Inventor: Jeffrey J. Spiegelman