Abstract: A polytetrafluoroethylene resin comprising polytetrafluoroethylene having a two-dimensional branched structure in the molecule is produced by exposing polytetrafluoroethylene to an ionizing radiation at a dose of no more than 10 kGy.

Abstract: In a process for fabricating a radiation detector comprising the step of drifting lithium from one side of a silicon wafer, a boron diffusion layer is formed on the other side of the silicon wafer prior to the drifting step. Therefore, in spite of the tendency of the drift layer to have uneven thickness, the drift layer is allowed to be formed uniformly over the entire area. This eliminates the need to lap the other side of the wafer to expose the drift layer over the entire surface. Also, a PN junction diode is formed on the other side of the wafer, and this makes the completed detector resistant to environmental influences, as opposed to conventional radiation detectors of this type which include a surface barrier type diode.

Abstract: A product having reduced friction and improved abrasion resistance comprises a formed resin containing at least one fluorine-containing polymer which is exposed to an ionizing radiation. The formed resin may include from 1 to 100 weight percent of the fluorine-containing polymer in the form of powder, and from 99 to 0 percent of a high molecule polymer which is not exposed to the ionizing radiation. The fluorine-containing polymer is preferably exposed to the ionizing radiation for a total dose of from 1 KGy to 10 MGy in the absence of oxygen at a temperature not lower than the melting point of a starting fluorine-containing polymer.

Abstract: Modified PTFE is produced by exposing a starting PTFE to an ionizing radiation for a total dose of at least 100 kGy in the absence of oxygen at a temperature not lower than the crystal melting point of the starting PTFE. The thus modified PTFE is improved in radiation resistance and has rubber characteristics.