Abstract: A surface-protected composite article, such as a missile component, is prepared with a heat-sink substrate, a first composite layer of an pre-ceramic-matrix structural composite material, and a second composite layer of a reinforced silicone pre-ceramic material. The silicone material is co-curable with the organic matrix of the first composite layer. The silicone at the surface of the article is thereafter converted to a silica refractory by an appropriate treatment such as exposure to an oxygen-rich plasma or a high-surface temperature. The silica protects the surface of the composite material.

Abstract: An interferometer or spectrometer having a short stroke reactionless drive mechanism is disclosed. The interferometer includes a housing, and a beamsplitter for reflecting an input beam along a fixed optical path and for transmitting the input beam along a scanned optical path. A nonmoving reflecting arrangement is disposed along the fixed optical path and includes first and second nonmoving mirrors disposed to reflect the input beam multiple times therebetween, and a backreflecting device disposed at a final bounce position of the input beam to return the optical beam back to the beamsplitter. A scanning mechanism is disposed along the scanned optical path that includes third and fourth mirrors supported by flexible members or flexure blades that are coupled to the housing, and a backreflecting device at a final bounce position of the input beam to return the optical beam back to the beamsplitter.

Abstract: A phased array antenna system having an array of antenna elements coupled to radio frequency energy feed network through a plurality of phase shifter sections with digital control data being fed to the phase shifter sections with radio frequency energy signal modulated with the digital control data. A modulator is fed by the source of the radio frequency energy and a modulating signal to produce the modulated radio frequency energy signal. A modulating signal generator/encoder, fed by the digital control data, encodes each bit of such digital control data into the modulating signal, such modulating signal being a bipolar signal having a pair of electrical signal changes corresponding to a binary state represented by such bit. The modulated radio frequency energy signal may be fed to the demodulator through the radio frequency feed network or through the antenna element coupled thereto.

Abstract: A light-activated reflector having a plurality of coplanar arrays of parallel optical fibers that are each covered with a thin coating of a semiconductor material. Silicon, germanium, and indium antimonide, for example, along with other suitable materials, may be used as the coating of semiconductor material. The number and spacing of the coplanar arrays are determined by the shortest wavelength at which the reflector is to be operated. Electron-hole pairs are created in the coating of semiconductor material when it is illuminated by photons having energy greater than the band-gap energy of the semiconductor material. Light is injected into the optical fibers of a selected array. The injected light is absorbed and creates electron-hole pairs in the coating of semiconductor material, which modifies the permittivity of the coating. The absorbed light causes the coating to become reflective at millimeter wave frequencies.

Abstract: A video buffer of a focal plane array (FPA) electrical interface module is presented for providing output capacitance cancellation. The buffer has a capacitance cancellation stage (50) for receiving an analog signal produced by a FPA. The cancellation stage (50) includes an amplifier having a gain greater than unity for amplifying the analog signal and positive feedback capacitor for reducing power requirements and providing an increased pixel rate for the system. A dc restoration stage (52) is included for setting the analog signal to a dc level that is required by an external system and a line driving stage (54) for driving a video cable from the buffer to the external components of the system.

Abstract: Methods of producing a chip scale package that enables any chip with peripheral bond pads to be converted to an area array chip scale package suitable for chip on board assembly. The present invention produces the equivalent of a flip chip die when a chip supplier does not provide one. Processing is performed that provides thin film metal interconnections between the chip bond pads and area array bond pads on the bottom of the package. High reliability thin film metal interconnections are thus provided that connect the bond pads of the chip to the area array bond pads to permit external connection to the chip.

Abstract: An electrically conductive infrared (IR) window (10) has high transmittance at IR wavelengths and includes an electrically conductive protective layer (14) which is direct bonded to a substrate (16) at room temperature without adhesive therebetween. The protective layer (14) and substrate (16) are transparent at IR wavelengths. The protective layer (14) and the substrate (16) are annealed at a bonding temperature above room temperature to enhance the bond strength. The protective layer (14) preferably comprises at least one of doped silicon and doped gallium arsenide and has a conductivity between 1 and 500 ohms/square. The substrate (16) preferably comprises at least one of zinc sulfide, zinc selenide, germanium, and gallium arsenide. The protective layer (14) and substrate (16) should be made of different materials with different coefficients of thermal expansion to allow debonding by heating above the bonding temperature.

Abstract: The invention is embodied in a digital direction finding receiver having N frequency channels spanning a frequency band of the receiver and capable of receiving signals simultaneously from a plurality of antennas spaced from one another, one of the antennas including a reference location antenna.

Abstract: A processor array 100 having an improved I/O pin utilization scheme. The inventive processor array 100 includes a first and a second set of processors 112 and 114 arranged within a chip boundary B1, with each of the processors 112 within the first set being positioned adjacent the chip boundary B1. The invention further includes an I/O arrangement for providing a plurality of electrical paths 136 across the chip boundary B1. A switch network is included for connecting each of the I/O paths 136 to a horizontal port 130 of an associated one of the processors 112 within the first set during a first clock cycle and for connecting each of the I/O paths 136 to a vertical communication port 132 of the associated processor during a second clock cycle.

Abstract: A measurement device (2) for measuring a collimated wave front through a lithographic lens includes a radiant energy source (4), a lens group (6) for collimating light emitted from said radiant energy source and directing said collimated light (7) toward a reference surface (10). A first binary optic (12) disposed in line with said collimated light and located adjacent to an input conjugate of a lens under test. A second binary optic (18) is arranged in a spaced relationship and in line with said first binary optic for retroreflecting light passing through a lithographic lens disposed between said first and second binary optics. A recording system (8,9) is provided for recording an interference with the light retroreflected-reflected back through said lens and through said reference surface.

Abstract: A method of producing a microwave power divider or combiner having equally matched sections of a split terminating resistor. The method initially matches the resistance value of both sections of the split terminating resistor by identifying which section has a lower resistance value. The ratio of the resistance values of the two sections is determined. The section having the lower resistance value is then trimmed until it is equal to the other. The termination sections may then be equally trimmed to provide a desired final resistance value for the terminating resistor.

Abstract: An imaging device (10, 10') has a plurality of unit cells (11) that contribute to forming an image of a scene. The imaging device includes a layer of wide bandgap semiconductor (18) material (e.g., silicon) having photogate charge-mode readout circuitry (20, 22, 24), such as CCD or CMOS circuitry, disposed upon a first surface of the layer. In one embodiment a second, opposing surface of the layer is bonded at a heterojunction interface or atomic bonding layer (16) to a surface of a layer of narrower bandgap semiconductor material (e.g., InGaAs or HgCdTe), that is selected for absorbing electromagnetic radiation having wavelengths longer than about one micrometer (i.e., the NIR or longer) and for generating charge carriers. The generated charge carriers are transported across the heterojunction interface for collection by the photogate charge-mode readout circuitry.

Abstract: A fault tolerant distributed intelligence control system for sensing and control across fault tolerant fiber optic communication media interconnecting a plurality of intelligent nodes. Each intelligent node comprises a digital control and communication processor (DCCP) operating autonomously in relation to DCCPs at other nodes, and a transceiver for interfacing with the communication media. The fiber optic communication media comprises bi-directional serial data buses. The combination provides a low cost highly reliable distributed control system particularly applicable to primary and secondary aircraft control systems, as well as to other vehicle and control systems.

Abstract: A radiation-hard, low-power semiconductor device of the complementary metal-oxide semiconductor (CMOS) type which is fabricated with a sub-micron feature size on a silicon-on-insulator (SOI) substrate (12). The SOI substrate may be of several different types. The sub-micron CMOS SOI device has both a fabrication and structural complexity favorably comparable to conventional CMOS devices which are not radiation-hard. A method for fabricating the device is disclosed.

Abstract: An improved universal adjustable modular load backpack for carrying heavy loads to be used in conjunction with a multi-functional, soldier-centered, computer enhanced warfare system includes storage modules releasably mounted on a flexible pack frame extending the wearer's level of comfort and range of motion. The storage modules provide for a versatile pack load configuration and may be quickly withdrawn from the pack frame by the wearer without removing the pack frame. The pack frame is also provided with an integrated adjustment mechanism for selectively increasing or decreasing the length of the shoulder support straps and rib-cage straps of the backpack, and the distance between the waist belt and the pack frame so as to adapt to the wearer's torso and waist without having to remove the backpack from the wearer's back.

Abstract: A jet vane control system and method for a missile in which the system is compact, rugged, lightweight and detachably connected to the aft end of a missile. The system provides for very quick pitch over and roll control during launch. The system then detaches from the missile so as not to burden the missile during its flight to target. The vanes of the system are divided into quadrants, each having its own, mounting support and gear train assembly. Each vane is also connected through a, detachable coupling to the steering control system of the missile such that actuation of the steering control system simultaneously actuates the jet vane control system.

Abstract: An imaging device (10) has a plurality of unit cells that contribute to forming an image of a scene. The imaging device includes a layer of semiconductor material (16), for example silicon, that has low noise photogate charge-mode readout circuitry (20, 21, 26, 28) (e.g., CCD or CMOS readout circuitry and structures) that is disposed upon a first surface (18) of the layer. A second, opposing surface of the layer is a radiation admitting surface of the layer. The layer has a bandgap selected for absorbing electromagnetic radiation having wavelengths shorter than about one micrometer and for generating charge carriers from the absorbed radiation. The generated charge carriers are collected by the photogate charge-mode readout circuitry. A thermal sensing element (22) is disposed above and is thermally isolated from the first surface of the layer. The thermal sensing element may be, by example, one of a bolometer element, a pyroelectric element, or a thermopile element.

Abstract: A calibration system and method for a display optical system including a projector and a projection screen. A calibration camera is inserted between the projector and the screen to receive the radiation directly from the projector. The image focused by the camera lens is captured by a charge-coupled device, and processed by a controller. The result is fed back to the image generator of the projector for further improvement in the image quality.

Abstract: The 25 Hz offset present in the subcarrier frequency of the PAL television standard causes residual and phase modified subcarrier to be left on the luminance signal, which can produce undesirable visual artifacts in the picture. In order to filter luminance therefore without loss of resolution, an adaptive luminance filtering process and structure are provided. Due to the wide range of sample frequencies that must be dealt with, there are e.g. three separate filters available selectable under software control depending on the particular video standard being filtered, i.e. for various of the of NTSC and PAL television standards. The adaptive notch filter is switched on during times of low video transitions and is by-passed during high video transitions, thus avoiding loss of resolution during the high video transitions.

Abstract: This invention teaches a method for fabricating an array (1) of pyroelectric detectors (10), and further teaches an array (1) of pyroelectric detectors (10) that include a bismuth layered compound. The array has a substrate (12) and a plurality of pyroelectric detector sites disposed over a surface of the substrate. Each of the pyroelectric detector sites is constructed to have a first electrode (16); a second electrode (20); and a thin layer (18) containing a bismuth layered compound that is interposed between and electrically coupled to the first and second electrodes. In one embodiment the thin layer is comprised of Y1 material (SrBi.sub.2 Ta.sub.2 O.sub.9), while in another embodiment the layer is comprised instead of YZ material (SrBi.sub.2 Nb.sub.2-x Ta.sub.x O.sub.9).