Abstract: A crystal growth furnace is disclosed herein and includes a top cover, a body and a bottom portion. The top cover is configured to be moved by a top cover shifting mechanism. The body is configured to be moved vertically by a body shifting mechanism. The bottom portion is configured to be moved from the bottom of the crystal growth furnace by a bottom portion shifting mechanism and used to carry a crucible. When the top cover, the body and the bottom portion are connected together to be the crystal growth furnace, a silicon material disposed within the crucible is grown to be an ingot.