Abstract: The invention comprises a device and method for surface cleaning of individual wafers or substrates arranged in a stack along a stacking direction, where a jet of fluid is sent towards the stack in a direction perpendicular to the stacking direction and it is provided a relative movement between the wafer stack and the nozzle in the stacking direction.

Abstract: A method for reducing attraction forces between wafers (4) is provided. This method includes the step of, after sawing and before dissolution of the adhesive (5), introducing spacers (6) between wafers (4). A wafer singulation method and an agent for use in the method are also provided.

Abstract: This invention relates to a device and method for production of ingots of semiconductor grade silicon, including solar grade silicon, where the presence of oxygen in the hot zone is substantially reduced or eliminated by employing materials void of oxides in the hot zone of the melting and crystallisation process. The method may be employed for any known process including for ciystallising semiconductor grade silicon ingots, including solar grade silicon ingots, such as the Bridgman process, the block-casting process, and the CZ-process for growth of monocrystalline silicon crystals. The invention also relates to devices for carrying out the melting and crystallisation processes, where the materials of the hot zone are void of oxides.

Abstract: This invention relates to reusable crucibles for production of ingots of semiconductor grade silicon made of nitride bonded silicon nitride (NBSN). The crucibles may be made by mixing silicon nitride powder with silicon powder, forming a green body of the crucible, and then heating the green body in an atmosphere containing nitrogen such that the silicon powder is nitrided forming the NBSN-crucible. Alternatively the crucibles may assembled by plate elements of NBSN-material that are to be the bottom and walls of a square cross-section crucible, and optionally sealing the joints by applying a paste comprising silicon powder and optionally silicon nitride particles, followed by a second heat treatment in a nitrogen atmosphere.

Abstract: The invention concerns a method for individually separating wafers from a stack of wafers by placing the stack of wafers in a microwave chamber, and exposing the wafers for microwaves causing the water between the wafers to evaporate.

Abstract: The present invention is related to a method for reducing attraction forces between wafers (4). This method is characterized in that it comprises the step of, after sawing and before dissolution of the adhesive (5), introducing spacers (6) between wafers (4). The invention comprises also a wafer singulation method and an agent for use in said methods.

Abstract: Apparatus for forming a multiplicity of thin wafers from at least two similar blocks, the apparatus comprising a supply reel (1) to supply wire, an upper pair (3a, 3b) and a lower pair (3c, 3d) of parallel spaced roller guides and a collection reel (4); a wire from the supply reel passes around successive grooves along the roller guides from near the supply reel to near the collection reel, so to form a four sided continuous web of wires along the length of the roller guides. Part way along the roller guides, the wire is diverted around at least two pulley wheels(5a, 5b) removing the wire from the web after it has passed over a roller guide at a predetermined point, and reintroducing the wire into the web via a subsequent roller guide at a point laterally displaced from the point at which it left the web, so that there is a gap in the web of wire which divides the web into two separate sections, and no cutting action can occur in that gap.

Abstract: The invention relates to a method for separation of a silicon wafer (12a) from a vertical stack (10) of silicon wafers (12). The method is characterised in that it comprises attaching a movable transport device (2) to a surface of the silicon wafer (12a) in the stack (10), and horizontal movement of the silicon wafer (12a) parallel (A) to the surface of the silicon wafer (12a) until the silicon wafer (12a) is separated from the stack (10). The invention also comprises a device for implementing the method.