Patents Assigned to REC Silicon Inc.
  • Energy efficient method for growing polycrystalline silicon
    Patent number: 7105053
    Abstract: Polysilicon dendrites are grown by depositing silicon on a polysilicon rod or other substrate. Surface temperature is increased to a temperature at which needle-like dendrites develop due to the deposition of silicon from silicon-containing molecules in the surrounding reactor atmosphere. Thereafter, the surface temperature is gradually reduced so that silicon that deposits on the needle-like dendrites causes the dendrites to grow and assume a generally flared shape.
    Type: Grant
    Filed: February 13, 2003
    Date of Patent: September 12, 2006
    Assignee: REC Silicon Inc.
    Inventors: Lyle C. Winterton, John P. Hill