Abstract: A method for bonding an electrically conductive silicon carbide structure to an electrically conductive siliconized silicon carbide structure by temporarily securing the siliconized silicon carbide structure to the silicon carbide structure; placing the silicon carbide structure with secured siliconized silicon carbide structure into an induction heating furnace having an induction coil which heats electrically conductive material in the furnace when sufficient electrical power at a frequency of from about 300 to about 1000 KC is passed through the coil; and causing sufficient electrical power at a frequency of from about 300 to about 1000 KC to be passed through the coil to raise the temperature of the siliconized silicon carbide structure and silicon carbide structure to a temperature above about 1500° C.

Abstract: A method for the manufacture of a structure from a carbide of a group IIa, group IIIa, group IVa, group IVb, group Vb, group VIb, group VIIb or group VIIIb carbon reactive element including the steps of: mixing the element with the carbon; and heating the carbon and the element to melt the element so that it reacts with the carbon to form the carbide; wherein, the carbon and element are heated by means of electromagnetic radiation having a frequency below the infrared spectrum. The method does not waste energy by unnecessary heating of the furnace or surrounding mold. The mold itself may be more stable because it is only heated by hot contained material and not by other sources of heat. Resulting formed products are not a sintered product and may approach one hundred percent of theoretical density. The carbon may be in the form of a powder that is mixed with the element or may be a porous carbon structure such as a graphite fiber mat or sheet into which the carbon reactive element is melted.