Abstract: A method is provided for manufacturing an integrated circuit device having a plurality of wiring layers including a first wiring layer which is not the upper most layer among the plurality of wiring layers and a second wiring layer higher than the first wiring layer in the plurality of wiring layers. An interlayer dielectric film is provided to cover the first wiring layer. Holes are then formed in the interlayer dielectric film and a mask film is formed to cover some of the holes. Etching using the mask film is then carried out and an insulating film formed on the interlayer dielectric film is removed, including the bottoms and/or insides of the holes. The mask film is then removed and a conductive member is formed inside the holes.

Abstract: A test apparatus for semiconductor devices comprises a self-test circuit carried on the semiconductor device and for test the semiconductor device. A tester supplies data signals, clock signals, and expected value data to the self-test circuit. A comparing and judging circuit compares the result of test with the expected-value data to judge the quality of the semiconductor device. A non-volatile memory cell stores the results of judgment.

Abstract: In accomplishing an LC-oscillation VCO circuit which is immune to frequency deviation and a frequency-hopping radio communication apparatus using the VCO circuit, a modulation semiconductor integrated circuit device is designed to control the LC-oscillation VCO directly with data to be transmitted thereby implementing the modulation and switch the carrier frequency for frequency hopping. The integrated circuit device includes a current adjusting circuit which varies the current value of a D/A conversion circuit for producing a control voltage of VCO in accordance with the carrier frequency so that the variation of a modulation control voltage of VCO has a characteristic that is opposite to the characteristic of modulation frequency deviation, thereby nullifying the modulation frequency deviation of VCO.