Patents Assigned to Renesas Eastern Technology Corp.
  • Multilayered semiconductor structure containing a MISFET, a resistor, a capacitor, and an inductor
    Patent number: 7479681
    Abstract: A semiconductor device including a MISFET formed in a well at a main surface of a substrate, a second MISFET formed at a main surface of the substrate, and a passive element formed over the main surface of the substrate and having two terminals. A conductive film is formed at a rear face of the semiconductor substrate. The conductive film is connected with a fixed potential and also electrically connected with the conductive film.
    Type: Grant
    Filed: April 12, 2007
    Date of Patent: January 20, 2009
    Assignee: Renesas Eastern Technology Corp.
    Inventors: Fumitaka Nakayama, Masatoshi Morikawa, Yutaka Hoshino, Tetsuo Uchiyama