Abstract: To suppress the noise caused by an inductor leaks to the outside, and also to be configured such that magnetic field intensity change reaches the inductor. An inductor surrounds an internal circuit in a planar view and also is coupled electrically to the internal circuit. The upper side of the inductor is covered by an upper shield part and the lower side of the inductor is covered by a lower shield part. The upper shield part is formed by the use of a multilayered wiring layer. The upper shield part has plural first openings. The first opening overlaps the inductor in the planar view.

Abstract: DAC includes a decoder that receives N number of reference voltages and an n-bit digital signal (n 4) to select first to third voltages, and an operational amplifier to output (first voltage+second voltage+2 third voltage)/4 voltage. The operational amplifier is able to output, for respective 2^n combinations of the n-bit digital signal, voltage levels from an Ath level, as a base level, to an (A?1+2^n)th level. The N number of reference voltages include Ath level, (A+4)th level, (A?4+2^n) and (A+2^n), and an at most {?4+2^(n?2)} reference voltages obtained by decimating a pre-set at least one reference voltage from {?3+2^(n?2)} reference voltages that are other than the four number of reference voltages from the {1+2^(n?2)} reference voltages corresponding to the voltage levels spaced each other at an interval of 4 levels from the Ath level. N is not less than 4 and not more than 2^(n?2).

Abstract: In a case where a semiconductor chip is mounted over a first package, 80 pads are coupled to 80 terminals of the package, and in a case where the semiconductor chip is mounted over a second package, 100 pads are coupled to 100 terminals of the second package. An internal circuit of the semiconductor chip operates as a microcomputer with 80 terminals in a case where electrodes are insulated from each other and operates as a microcomputer with 100 terminals in a case where the electrodes are shorted therebetween by an end part of a bonding wire. Therefore, a dedicated pad for setting the number of terminals of the packages is no longer required.

Abstract: An apparatus provides good bonding between a package structure and a substrate and extended solder bonding life, even under heat stress. Of a lead frame to be used for a package structure having a configuration in which a semiconductor chip, an island of the lead frame, and external connection terminals are sealed with a resin from one surface, and the island and the external connection terminals are exposed on the other surface, the external connection terminals include a first external connection terminal disposed at a central part of each of sides of an outer rim of a semiconductor chip mounting region in which the semiconductor chip is to be mounted and a second external connection terminal outside the first external connection terminal at each of the sides of the outer rim of the semiconductor chip mounting region, wherein the first external connection terminal area exceeds the second external connection terminal's.

Abstract: A lower electrode includes a metal-containing oxide layer having a thickness of 2 nm or less on the surface layer. A metal-containing oxide layer is formed by oxidizing the surface of the lower electrode. A dielectric film includes a first phase appearing at room temperature in the bulk state and a second phase appearing at a higher temperature than that in the first phase in the bulk state. The second phase has a higher relative permittivity than that of the first phase.

Abstract: A waveform generating circuit includes a constant current circuit that supplies a constant current through a power source; a current mirror circuit that flows an output current that is n times an input current; and a switching circuit that switches a flowing direction of the current in the constant current circuit between the current mirror circuit and the output terminal according to the logical level of the rectangle input signal. The waveform generating circuit generates a triangle wave having a falling slope waveform that is n times the rising slope. On the other hand, the waveform generating circuit that receives an inverted signal of the signal generates a triangle wave and its voltage is compared with another in the comparator to generate an output signal.

Abstract: To provide a semiconductor device having a structure in which a barrier metal film containing nitrogen is formed in a connection surface between a copper alloy wiring and a via, in which the electric resistance between the copper alloy wiring and the via can be prevented from rising, and the electric resistance can be prevented from varying. A semiconductor device according to the present invention comprises a first copper alloy wiring, a via and a first barrier metal film. The first copper alloy wiring is formed in an interlayer insulation film and contains a predetermined additive element in a main component Cu. The via is formed in an interlayer insulation film and electrically connected to the upper surface of the first copper alloy wiring. The first barrier metal film is formed so as to be in contact with the first copper alloy wiring in the connection part between the first copper alloy wiring and the via and contains nitrogen.