Abstract: Replacement metal gates well suited for self-aligned contact formation are made by replacing the dummy gate with a recessed polysilicon layer and then effecting an aluminum-polysilicon substitution. The resulting upper polysilicon layer is easily removed from the recessed aluminum layer, which can then be protected with a protective dielectric layer for subsequent formation of a source or drain contact hole.
Abstract: Productivity is to be improved in assembling a semiconductor integrated circuit device. A matrix substrate is provided and semiconductor chips are disposed on a first heating stage, then the matrix substrate is disposed above the semiconductor chips on the first heating stage, subsequently the semiconductor chips and the matrix substrate are bonded to each other temporarily by thermocompression bonding while heating the chips directly by the first heating stage, thereafter the temporarily bonded matrix substrate is disposed on a second heating stage adjacent to the first heating stage, and then on the second heating stage the semiconductor chips are thermocompression-bonded to the matrix substrate while being heated directly by the second heating stage.
Type:
Grant
Filed:
November 14, 2011
Date of Patent:
October 23, 2012
Assignees:
Renesas Eletronics Corporation, Renesas Eastern Japan Semiconductor, Inc.