Patents Assigned to RENESAS TECHNOLOY CORP
  • SEMICONDUCTOR MEMORY DEVICE
    Publication number: 20090091970
    Abstract: Source contacts of driver transistors are short-circuited through the use of an internal metal line within a memory cell. This metal line is isolated from memory cells in an adjacent column and extends in a zigzag form in a direction of the columns of memory cells. Individual lines for transmitting the source voltage of driver transistors can be provided for each column, and the source voltage of driver transistors can be adjusted also in units of memory cell columns in the structure of single port memory cell.
    Type: Application
    Filed: December 1, 2008
    Publication date: April 9, 2009
    Applicant: RENESAS TECHNOLOY CORP
    Inventor: Koji Nii