Patents Assigned to Renesas Tehcnology Corp.
  • MOSFET package
    Patent number: 7394146
    Abstract: A semiconductor device, wherein a first metallic member is bonded to a first electrode of a semiconductor element via a first metallic body containing a first precious metal, and a second metallic member is bonded to a second electrode via a second metallic body containing a second precious metal.
    Type: Grant
    Filed: October 31, 2006
    Date of Patent: July 1, 2008
    Assignees: Renesas Tehcnology Corp., Hitachi Tohbu Semiconductor, Ltd.
    Inventors: Ryoichi Kajiwara, Masahiro Koizumi, Toshiaki Morita, Kazuya Takahashi, Munehisa Kishimoto, Shigeru Ishii, Toshinori Hirashima, Yasushi Takahashi, Toshiyuki Hata, Hiroshi Sato, Keiichi Ookawa