Abstract: A method of manufacturing a semiconductor device includes forming a channel layer on a substrate, forming a mask on the channel layer, surface-treating an exposed surface of the channel layer exposed from the mask, forming an electrode on the exposed surface of the channel layer, and removing the mask. The channel layer includes a two-dimensional material, and the surface-treating of the exposed surface of the channel layer includes surface-treating the exposed surface of the channel layer with HCl.
Type:
Application
Filed:
March 6, 2023
Publication date:
January 4, 2024
Applicants:
SAMSUNG ELECTRONICS CO., LTD, RESEARCH & BUSINESS FOUNDATION OF SUNGKYEUNGAM UNIVERSITY
Inventors:
Jin-Hong PARK, Hogeun AHN, BoReum LEE, Sunguk JANG, Jiwan KOO, Seunghwan SEO