Abstract: Provided is an adduct represented by Formula 1: A.PbY2.Q??(1) wherein A is an organic or inorganic halide, Y is F?, Cl?, Br? or I? as a halogen ion, and Q is a Lewis base including a functional group containing a nitrogen (N), oxygen (O) or sulfur (S) atom with an unshared pair of electrons as an electron pair donor. The Lewis base is maintained more stable in the lead halide adduct. Therefore, the use of the adduct enables the fabrication of a perovskite solar cell with high conversion efficiency.

Abstract: A capacitor structure includes: a first substrate having a first electrode part provided on one surface thereof; a second substrate having a second electrode part provided on a surface thereof, which faces the first substrate; and a dielectric layer provided between the first substrate and the second substrate, wherein a Poisson's ratio of the first substrate or the second substrate is different from a Poisson's ratio of the dielectric layer. The capacitor structure has a substantially constant capacitance even when the capacitor structure is exposed to external strain.

Abstract: A ternary content addressable memory (TCAM) device includes a memory cell. The memory cell includes a data storage circuit, a limiter circuit, and a discharge circuit. The data storage circuit includes a first resistor and a second resistor connected in series to divide a voltage corresponding to search data, and configured to store cell data. The limiter circuit is configured to receive the divided voltage through an input terminal and transmit an output voltage through an output terminal based on a level of the divided voltage. The discharge circuit discharges a matching line indicating whether the stored cell data matches with the search data, based on the output voltage of the limiter circuit.

Abstract: A method for transmitting downlink data from a BS in a wireless communication system is disclosed. The method comprises receiving a first request signal of the downlink data from a first UE at a first timing point; transmitting packet of the downlink data to the first UE by using a unicast scheme until a multicast preparation time period passes from the first timing point; receiving a second request signal of the downlink data from a second UE at a second timing point after the first timing point; transmitting packet of the downlink data to the second UE by using the unicast scheme until the multicast preparation time period passes from the second timing point; and transmitting packet of the downlink data to a multicast group, which includes the first UE and the second UE, by using a multicast scheme when the multicast preparation time period passes.

Abstract: A high-sensitivity sensor containing cracks is provided. The high-sensitivity sensor is obtained by forming microcracks on a conductive thin film, which is formed on top of a support, wherein the microcracks form a micro joining structure in which the microcracks are electrically changed, short-circuited or open, thereby converting external stimuli into electric signals by generating a change in a resistance value. The high-sensitivity sensor can be useful in a displacement sensor, a pressure sensor, a vibration sensor, artificial skin, a voice recognition system, and the like.

Abstract: Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the method comprises steps of depositing a metal seed layer on a substrate; applying and patterning a photoresist or a dry film; forming a gold bump by electroplating; patterning the seed layer; forming an insulating layer on the seed layer and upper end of the gold bump; and patterning an insulating layer. Accordingly, it is possible to manufacture a flip chip, in which electrical function between bumps can be evaluated, with less cost.

Abstract: Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the method comprises steps of depositing a metal seed layer on a substrate; applying and patterning a photoresist or a dry film; forming a gold bump by electroplating; patterning the seed layer; forming an insulating layer on the seed layer and upper end of the gold bump; and patterning an insulating layer. Accordingly, it is possible to manufacture a flip chip, in which electrical function between bumps can be evaluated, with less cost.

Abstract: Disclosed is a method for manufacturing a flip chip, in which a gold typically used in a flip chip manufacturing is adhered by conductive adhesives, wherein the method comprises steps of depositing a metal seed layer on a substrate; applying and patterning a photoresist or a dry film; forming a gold bump by electroplating; patterning the seed layer; forming an insulating layer on the seed layer and upper end of the gold bump; and patterning an insulating layer. Accordingly, it is possible to manufacture a flip chip, in which electrical function between bumps can be evaluated, with less cost.