Patents Assigned to Research Foundation of SUNY - New York
  • Method of interlayer mediated epitaxy of cobalt silicide from low temperature chemical vapor deposition of cobalt
    Patent number: 6346477
    Abstract: A process for the preparation of cobalt disilicide films comprises chemical vapor deposition (CVD) of cobalt from cobalt tricarbonyl nitrosyl as cobalt source precursor, capping the cobalt layer and annealing to form epitaxial cobalt disilicide on the silicon substrate.
    Type: Grant
    Filed: January 9, 2001
    Date of Patent: February 12, 2002
    Assignee: Research Foundation of SUNY - New York
    Inventors: Alain E. Kaloyeros, Ana Londergan, Barry Arkles