Patents Assigned to Resonance Semiconductor Corporation
-
Patent number: 8531083Abstract: A tunable acoustic resonator device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different and, consequently, the different levels of applied stress are used to tune the acoustic resonator device. Compared with the tunable resonator device consisting of only tunable crystal medium, a device having both the piezoelectric and tunable crystal medium has advantages such as larger inherent bandwidth and less nonlinearity with AC signals. The device also requires a smaller applied stress (i.e. bias voltage) to achieve the required frequency tuning.Type: GrantFiled: February 24, 2009Date of Patent: September 10, 2013Assignee: Resonance Semiconductor CorporationInventors: Rajarishi Sinha, L. Richard Carley, Deok-Yang Kim
-
Patent number: 8487511Abstract: A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.Type: GrantFiled: July 16, 2012Date of Patent: July 16, 2013Assignee: Resonance Semiconductor CorporationInventors: Rajarishi Sinha, L. Richard Carley, Louis Caley Chomas, Hugo Safar
-
Patent number: 8373519Abstract: A switchable power combiner is disclosed. The switchable power combiner has an output section that is a signal source connected to a transformer section. The transformer section has one or more primaries and a common secondary. The transformer primaries and secondary are acoustically coupled. The primaries or/and the secondary are made of switchable piezoelectric material, such that the acoustic coupling between any primary and the secondary can be switched on or off by electrical control, thereby implementing a switchable power combiner. The transformer secondary is connected to an antenna port. The power amplifier output section is segmented and connected to the transformer primaries. The power amplifier output section has a plurality of power amplifiers and a plurality of reactance elements, either fixed or variable. The switchable power combiner generates different linear load lines by switching on and off the coupling between any primary and the secondary.Type: GrantFiled: January 26, 2010Date of Patent: February 12, 2013Assignee: Resonance Semiconductor CorporationInventors: Rajarishi Sinha, L. Richard Carley
-
Patent number: 8242850Abstract: A direct digital frequency synthesizer having a multi-modulus divider, a numerically controlled oscillator and a programmable delay generator. The multi-modulus divider receives an input clock having an input pulse frequency fosc and outputs some integer fraction of those pulses at an instantaneous frequency fVp that is some integer fraction (1/P) of the input frequency. The multi-modulus divider selects between at least two ratios of P (1/P or 1/P+1) in response to a signal from the numerically controlled oscillator. The numerically controlled oscillator receives an accumulator increment (i.e., the number of divided pulse edges) required before an overflow occurs that causes the multi-modulus divider to change divider ratios in response to an overflow. The numerically controlled oscillator also outputs both the overflow signal and a delay signal to the delay generator. The delay signal contains phase-dithering noise that is induced by input from a pseudo-random noise generator.Type: GrantFiled: May 21, 2010Date of Patent: August 14, 2012Assignee: Resonance Semiconductor CorporationInventors: Anthony L. Tsangaropoulos, David Francois Guillou
-
Patent number: 8222795Abstract: A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.Type: GrantFiled: September 27, 2011Date of Patent: July 17, 2012Assignee: Resonance Semiconductor CorporationInventors: Rajarishi Sinha, L. Richard Carley, Louis Caley Chomas, Hugo Safar
-
Patent number: 8089195Abstract: The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.Type: GrantFiled: December 17, 2007Date of Patent: January 3, 2012Assignee: Resonance Semiconductor CorporationInventors: Rajarishi Sinha, Peter Ledel Gammel, Marco Mastrapasqua, Hugo Safar
-
Patent number: 8030823Abstract: A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.Type: GrantFiled: January 26, 2009Date of Patent: October 4, 2011Assignee: Resonance Semiconductor CorporationInventors: Rajarishi Sinha, L. Richard Carley, Louis Caley Chomas, Hugo Safar
-
Publication number: 20100187948Abstract: A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.Type: ApplicationFiled: January 26, 2009Publication date: July 29, 2010Applicant: Resonance Semiconductor CorporationInventors: Rajarishi Sinha, L. Richard Carley, Louis Caley Chomas, Hugo Safar
-
Patent number: 7724097Abstract: A direct digital frequency synthesizer having a multi-modulus divider, a numerically controlled oscillator and a programmable delay generator. The multi-modulus divider receives an input clock having an input pulse frequency fosc and outputs some integer fraction of those pulses at an instantaneous frequency fVp that is some integer fraction (1/P) of the input frequency. The multi-modulus divider selects between at least two ratios of P (1/P or 1/P+1) in response to a signal from the numerically controlled oscillator. The numerically controlled oscillator receives a value which is the accumulator increment (i.e. the number of divided pulse edges) required before an overflow occurs that causes the multi-modulus divider to change divider ratios in response to receiving an overflow signal.Type: GrantFiled: August 28, 2008Date of Patent: May 25, 2010Assignee: Resonance Semiconductor CorporationInventors: L. Richard Carley, Anthony L. Tsangaropoulos, Esa Tarvainen
-
Publication number: 20090289526Abstract: A tunable acoustic resonator device. The device has a piezoelectric medium as a first thin film layer and a tunable crystal medium as a second thin film layer. The tunable crystal medium has a first acoustic behavior over an operating temperature range under a condition of relatively low applied stress and a second acoustic behavior under a condition of relatively high applied stress. The acoustic behaviors are substantially different. The tunable crystal medium has a highly field-polarizable and lattice-deformable, substantially centrosymmetric structure over an operating temperature range under a condition of relatively low applied stress. The tunable crystal medium has a substantially non-centrosymmetric structure over said operating temperature range under a condition of relatively high applied stress. The dielectric permittivity of the tunable crystal medium is at least 100 at the relatively low applied stress.Type: ApplicationFiled: February 24, 2009Publication date: November 26, 2009Applicant: RESONANCE SEMICONDUCTOR CORPORATIONInventors: Rajarishi Sinha, L. Richard Carley, Deok-Yang Kim