Abstract: A pseudomorphic-high-electron-mobility-transistor (PHEMT) includes a substrate, a low-temperature-grown (LTG) GaAs gate-insulator layer disposed on the substrate, and a gate electrode disposed on the gate-insulator layer.

Abstract: A method for the singulation of integrated circuit die, the method including: etching a semiconductor layer disposed on a silicon oxide dielectric layer, thereby forming a trench defining a boundary of the die; depositing a silicon nitride layer in the trench; coating the semiconductor layer with an oxide layer such that the trench is filled; removing part of the oxide layer from the semiconductor layer such that the oxide layer only remains in the trench; mounting the semiconductor layer to a carrier; removing the silicon oxide dialectic layer, the nitride layer, and the oxide layer; and releasing the die from the carrier. The method is suitable for irregularly shaped or extremely small die and is compatible with traditional CMOS processes.

Abstract: The present invention pertains to radiant energy systems and more particularly to systems exhibiting the retroreflection principle wherein the system comprises a focusing means and a surface exhibiting some degree of reflectivity positioned near the focal plane of the device, and wherein incident radiation falling within the field-of-view of said system is reflected back in a direction which is parallel to the incident radiation. The present invention has great applicability in military optical system applications for detecting the presence of an enemy employing surveillance equipment and for neutralizing this surveillance capability.

Abstract: The present invention pertains to radiant energy systems and more particularly to systems exhibiting the retroreflection principle wherein the system comprises a focusing means and a surface exhibiting some degree of reflectivity positioned near the focal plane of the device, and wherein incident radiation falling within the field-of-view of said system is reflected back in a direction which is parallel to the incident radiation. The present invention has great applicability in military optical system applications for detecting the presence of an enemy employing surveillance equipment and for neutralizing this surveillance capability.

Abstract: The present invention pertains to radiant energy systems and more particularly to systems exhibiting the retroreflection principle wherein the system comprises a focusing means and a surface exhibiting some degree of reflectivity positioned near the focal plane of the device, and wherein incident radiation falling within the field-of-view of said system is reflected back in a direction which is parallel to the incident radiation. The present invention has great applicability in military optical system applications for detecting the presence of an enemy employing surveillance equipment and for neutralizing this surveillance capability.