Abstract: An arrangement for wet-etching a semiconductor wafer simultaneously subjects the reverse side to a water rinse. A semiconductor wafer is placed face down on top of a cylindrical tower, and an etchant such as hydrofluoric acid is sprayed up against that face through a nozzle at the base of the tower. On the upper side of the wafer another water jet flows deionized water onto the wafer to shield the upper surface from any vapors that may escape around the seal. An exhaust vent arrangement surrounding the tower pulls air containing any stray etchant vapors radially outward from the vicinity of the wafer.

Abstract: A megasonic plating technique employs a submerged megasonic transducer array (22) to create a ridge (38) of electrolyte that extends upward above a plating tray (12). A chuck (40) holds the substrate (42) so the face to be plated is oriented downwards. A controlled power supply (32) for the megasonic transducer array (22) energizes selected transducer cells (36) to create the ridge (38) of electrolyte and cause it to move or walk across the face of the substrate. This technique avoids need for drive mechanisms for either the tray (12) or the chuck (40). A annular anode element (24) may be positioned above the transducer array, and may be a consumable anode. This technique may be used for electroplating, electroless plating, or for other wet chemistry techniques such as planing or etching.

Abstract: A heated platen or chuck is employed in connection with a wet chemistry process cell, such as a plating cell for plating a flat substrate. A flow of electrolyte or other wet process solution is introduced into the cell across the surface of the substrate which is mounted on a the chuck or holder. A cathode ring may be disposed to make electrical contact with the substrate. The cathode ring can include a thin metal thieving ring. A fluid-powered rotary blade or wiper may be employed to draw bubbles or other impurities from the substrate, and a megasonic transducer can apply megasonic acoustic energy to the solution. The cell can be used for electroless or galvanic plating. A heater in the chuck heats the substrate to a temperature significantly above that of the electrolyte. Heating the substrate during plating improves the grain structure of the plated metal.

Abstract: An electroplaning technique achieves superior flatness of the face of a wafer. A chuck holds the wafer so the face of the wafer is oriented downwards and lowers it to an electroplaner stage. The electroplaner includes an elongated, horizontally extending cup, an elongated horizontally extending nozzle within it. Electrolyte flows non-turbulently from an upper side of the nozzle to create a meniscus of electrolyte that contacts the wafer. The electroplaner moves transversely while the chuck is held steady so that said meniscus sweeps across the face of said wafer. A rinser of similar construction likewise has a meniscus or rinse that sweeps across the wafer. The nozzle can have a row of openings along its upper side, or may be formed at least in part of a microporous material. The wafer is electrically configured as cathode.

Abstract: A wet process apparatus, e.g., plating cell for plating a flat substrate introduces a flow of electrolyte or other plating solution across the surface of the substrate to be plated. The substrate is mounted on a holder that is positioned on a door that swings between a horizontal open position and a vertical closed position. There is a circular opening in a front wall against which the door seats. The door can have a sealing ring that contacts the wall of the cell outside of the opening. A cathode ring disposed in a recess in the periphery of the opening makes electrical contact with the substrate. The cathode ring can include a thin metal thieving ring. A fluid-powered rotary blade or wiper within the plating chamber rotates to draw bubbles or other impurities from the substrate, and a megasonic transducer applies megasonic acoustic energy to the solution, e.g., at 0.2 to 5 Mhz. The cell can be used for electroless or galvanic plating.

Abstract: A plating cell for plating a flat substrate employs a sparger to introduce a flow of electrolyte or other plating solution across the surface of the substrate to be plated. A fluid-powered rotary blade or wiper within the cathode chamber has a rotary blade with an edge spaced a small distance, preferably about three-eighths inch, from the substrate, and an annular turbine which rotates under a flow of the electrolytic fluid that is also being fed to the sparger. The rotary wiper is run at a speed between about 35 and 80 rpm and draws the electrolyte away from the substrate. This helps remove hydrogen bubbles that form during electroplating. In addition, a megasonic transducer applies megasonic acoustic energy to the solution, e.g., at 0.2 to 5 MHz.

Abstract: A plating cell adapted for electro-less plating of articles, for example, semiconductor wafers contained in a carrier or "boat", incorporates a megasonic transducer in the plating cell and a rotational drive supporting the wafer carrier in the plating cell. The megasonic transducer applies acoustic energy at megasonic frequencies to the solution in the cell during a plating operation, and the carrier is rotated at a suitable speed, e.g., 45 to 60 r.p.m. A rapid drain is provided to remove the solution from the cell quickly at the end of a plating operation, and a pair of spray tubes with a series of spray nozzles rinses the wafers with de-ionized water. Spargers at the base of the cell inject the plating solution, which proceeds generally upwards in a laminar flow, and spills over a spillway at the top of the plating tank. The spillway comprises a series of triangular teeth which avoid waves or turbulence.

Abstract: A plating cell for plating a flat substrate, for example, a stamper for a high-density compact disk recording, employs a sparger to introduce a flow of electrolyte across the surface of the substrate to be plated. A fluid-powered rotary blade or wiper within the cathode chamber has a rotary blade with an edge spaced a small distance, preferably about three-eighths inch, from the substrate, and an annular turbine which rotates under a flow of the electrolytic fluid that is also being fed to the sparger. The rotary wiper is run at a speed between about 35 and 80 rpm and draws the electrolyte away from the substrate. This helps remove hydrogen bubble that form during electroplating. A semipermeable weir separates the cathode chamber from an anode chamber that contains an anode basket that is filled with plating material. The plating cell is provided with a backwash flow regime so that impurities and inclusions from the anode chamber are kept out of the plating bath.

Abstract: A plating cell for plating a flat substrate, for example, a stamper for a high-density compact disk recording, employs an arcuate sparger to introduce a laminar flow of electrolyte across the surface of the substrate to be plated. In a preferred embodiment, the sparger occupies about 90 to about 120 degrees of arc. A semipermeable weir separates the main plating bath from an anode chamber that contains an anode basket that is filled with nuggets of nickel or other plating material. The plating cell is provided with a backwash flow regime so that impurities and inclusions from the anode chamber are kept out of the plating bath. The substrate can be positioned between vertical and about forty-five degrees from vertical, and can be supported with or without rotation.