Abstract: A thick film construct and quadrature coupler for use in fabricating devices such as IQ modulators, IQ demodulators, vector modulators, image reject mixers, and multi-channel mixers. The thick film construct includes a dielectric substrate base with a metallized backside, a first metal trace deposited on the non-metallized side of the substrate base, a dielectric layer deposited over and around the first metal trace, and a second metal trace deposited on the dielectric layer. The first and second metal traces are aligned over their widths and lengths so to form a balanced transmission line structure where the first and second metal traces represent top and bottom lines in the balanced structure. This thick film structure serves as the foundation for microwave capacitors, mixers, and other transmission line based structures, including a quadrature coupler.

Abstract: A thick film balanced line multilayered structure having a substrate base of nominal 0.025 or 0.030 inch thick ceramic material, a first metal layer deposited on the substrate base, a nominal 0.003 inch thick dielectric layer deposited over and around the first metal layer, and a second metal layer deposited on top of the dielectric layer in alignment with, and parallel to, the first metal layer. The structure defines a standard circuit cell suitable for use as a balun, a capacitor or an autotransformer, for use in microwave mixers, power splitters, filters, resonators and other microwave devices. The impedance of the cell is controlled by the width of the metal layers, and ranges from 5 ohms to 125 ohms, and the frequency of the cell is controlled by the length of the metal layers.

Abstract: A thick film balanced line multilayered structure having a substrate base of nominal 0.025 or 0.030 inch thick ceramic material, a first metal layer deposited on the substrate base, a nominal 0.003 inch thick dielectric layer deposited over and around the first metal layer, and a second metal layer deposited on top of the dielectric layer in alignment with, and parallel to, the first metal layer. The structure defines a standard circuit cell suitable for use in microwave filters. The impedance of the cell is controlled by the width of the metal layers, and ranges from 5 ohms to 125 ohms, and the frequency of the cell is controlled by the length of the metal layers.

Abstract: A thick film balanced line multilayered structure having a substrate base of nominal 0.025 or 0.030 inch thick ceramic material, a first metal layer deposited on the substrate base, a nominal 0.003 inch thick dielectric layer deposited over and around the first metal layer, and a second metal layer deposited on top of the dielectric layer in alignment with and parallel to, the first metal layer. The structure defines a standard circuit cell suitable for use in microwave splitters. The impedance of the cell is controlled by the width of the metal layers, and ranges from 5 ohms to 125 ohms, and the frequency of the cell is controlled by the length of the metal layers.