Abstract: Disclosed are apparatuses and methods for fabricating the apparatuses. In one aspect, an apparatus includes a high-power die mounted on a backside of a package substrate. A heat transfer layer is disposed on the backside of the high-power die. A plurality of heat sink interconnects is coupled to the heat transfer layer. The plurality of heat sink interconnects is located adjacent the high-power die in a horizontal direction.

Abstract: Certain aspects of the present disclosure provide an electroacoustic device and methods for signal processing via the electroacoustic device. One example electroacoustic device generally includes a first surface acoustic wave (SAW) resonator comprising a first apodized interdigital transducer (IDT) disposed between a first busbar and a second busbar, and a second SAW resonator comprising a second apodized IDT disposed between the second busbar and a third busbar, wherein the second busbar is at an angle with respect to at least one of the first busbar or the third busbar.

Abstract: An electronic filter comprises a high pass section (110) and a low pass section (120). The high pass section includes at least one filter stage of a series-connected acoustic resonator (111) and a parallel connected inductor (114). The low pass section comprises at least one filter stage including a series-connected inductor (121) and a parallel connected acoustic resonator (123). The filter is useful for a communication device covering the n79 5G band.

Abstract: A high Q acoustic BAW resonator with high coupling and improved spurious mode suppression is given. The BAW resonator comprises an active resonator region (AR) formed by an overlap of the three layers bottom electrode (BE), piezoelectric layer (PL) and top electrode layer (TE). An inner-flap (IF) is formed by a dielectric 3D structure sitting on a marginal region (MR) of the active resonator region (AR) or adjacent thereto, extending inwardly towards the center thereof and having a section that runs in parallel and distant to the top surface of the resonator keeping an inner gap (IG) thereto or an angle ?.

Abstract: A TF-SAW resonator with improved quality factor is provided. The resonator has its piezoelectric material in the form of a thin film and an electrode structure arranged on the piezoelectric layer. Pitch (P) and metallization ratio (n) are chosen to maximize the quality factor (Q).

Abstract: A filter circuit comprises in a signal line a band filter (BF) allowing to let pass a useful frequency band and a notch filter (NF) circuited in series to the band filter for filtering out a stop band frequency. The notch filter comprises a series circuit of a number of parallel shunt elements (SE1 . . . SE6) wherein each shunt element is shifted infrequency against the other shunt elements that the frequencies thereof are distributed (f1 . . . F6) over a notch band. All shunt elements may be realized as a SAW one-port resonator (TRNF) including regions with different pitches.

Abstract: An apparatus is disclosed for a surface-acoustic-wave filter using lithium niobate (LiNbO3). In an example aspect, the apparatus includes at least one surface-acoustic-wave filter including an electrode structure, a substrate layer, and a piezoelectric layer disposed between the electrode structure and the substrate layer. The piezoelectric layer includes lithium niobate material configured to enable propagation of an acoustic wave across its planar surface in a direction along a first filter axis. A second filter axis is along the planar surface and perpendicular to the first filter axis. A third filter axis is normal to the planar surface. An orientation of the first, second, and third filter axes is relative to a crystalline structure of the lithium niobate material as defined by Euler angles ?, ?, and ?. A value of ? has a range approximately from ?70° to ?55° or at least one symmetrical equivalent.

Abstract: A BAW resonator comprises a center area (CA), an underlap region (UL) surrounding the center area having a thickness smaller than the thickness dC of the center region and a frame region (FR), surrounding the underlap region having thickness dF greater than dC.

Abstract: A BAW resonator with an improved lateral energy confinement is provided. The resonator has a bottom electrode in a bottom electrode layer, a top electrode in a top electrode layer and a piezoelectric layer between the bottom electrode layer and the top electrode layer. The piezoelectric layer comprises piezoelectric materials of different piezoelectric polarities.

Abstract: Aspects of the disclosure relate to wireless communication, and high-frequency filters with resonators. One example is a frequency band filter circuit having a split resonator. The split resonator comprises a resonator including a first section of a shared input busbar, a first section of a shared output busbar, and an electrode structure between the first section of the shared input busbar and the first section of the shared output busbar, the electrode structure configured for a resonance. The split resonator also comprises a detuned resonator. The detuned resonator includes a second section of the shared input busbar, a second section of the shared output busbar, and a detuned electrode structure between the second section of the shared input busbar and the second section of the shared output busbar, the detuned electrode structure configured for a detuned resonance different from the resonance.

Abstract: Disclosed is a device and methods for making same. In one aspect, a device includes a package having at least four pins, and, within the package, a die that includes a filter circuit electrically coupled to the four pins. The filter can: receive, from a first pin, an input signal comprising first and second frequency components, produce, at a second pin, a first output signal of the first frequency component, and produce, at a third and fourth pin, a second output signal of the second frequency component; and/or receive, from a second pin, a first input signal comprising the first frequency component, receive, from a third or fourth pin, a second input signal comprising the second frequency component, and produce, at a first pin, an output signal comprising the first and second frequency components. The second pin is interposed between the third and fourth pins on the package.

Abstract: Certain aspects of the present disclosure provide a bulk acoustic wave (BAW) resonator having a substrate with a heatsink region and an electrical insulator region. An example electroacoustic device generally includes a piezoelectric layer, a first electrode structure, a second electrode structure, one or more reflector layers, and a substrate having a heatsink region and an electrical insulator region. The heatsink region is arranged under a first portion of the first electrode structure, the first portion of the first electrode structure overlapping the second electrode structure. The insulator region is arranged under a second portion of the first electrode structure, the second portion of the first electrode structure being adjacent to the first portion of the first electrode structure.

Abstract: A SAW device having a stacked design of functional layers is proposed that is build up on a carrier substrate (SUB) that is chosen to provide a high acoustic velocity. The stack further comprises a thin TCF compensation layer (TCL), a thin film piezoelectric layer (PEL) and a set of interdigital electrodes (IDE) on top of the piezoelectric layer. Energy of the desired mode mainly in the high acoustic velocity material. Despite the high possible operating frequencies the SAW device can reliably be manufactured with present lithographic techniques.

Abstract: A quadplexer providing improved insertion loss and pass band steepness is provided. The quadplexer comprises a first filter structure with a first filter element, a second filter structure with a second filter element and an inductive element that is electrically connected in series between common ports of the filter structures and input ports of the filter elements.