Abstract: A phase change memory having a memory material layer consisting of a phase change material, and a first and second electrical contact which are located at a distance from one another and via which a switching zone of the memory material layer can be traversed by a current signal, wherein the current signal can be used to induce a reversible phase change between a crystalline phase and an amorphous phase and thus a change in resistance of the phase change material in the switching zone. The invention also relates to a phase change memory assembly, a phase change memory cell, a 2D phase change memory cell array, a 3D phase change memory cell array and an electronic component.
Type:
Grant
Filed:
October 19, 2004
Date of Patent:
January 25, 2011
Assignees:
Rheinisch-Westfaelische Technische Hochschle Aachen, Commisssariat a l'Energie Atomique
Inventors:
Peter Haring Bolivar, Bernard Bechevet, Veronique Sousa, Dae-Hwang Kim, Heinrich Kurz, Florian Merget