Patents Assigned to Rhohm Co., LTD
  • Metal ferroelectric silicon field effect transistor memory
    Patent number: 6128212
    Abstract: On the surface of a semiconductor substrate between a source region and a drain region formed on the semiconductor substrate, an insulating layer, a conductive thin film used as a floating electrode, a ferroelectric thin film and a conductive thin film used as a control electrode are successively formed. Writing or erasing is performed by causing a potential difference between the control electrode and the semiconductor substrate to reverse the polarization of the ferroelectric thin film.
    Type: Grant
    Filed: April 29, 1998
    Date of Patent: October 3, 2000
    Assignee: Rhohm Co., LTD
    Inventors: Takashi Nakamura, Yuichi Nakao