Abstract: The invention relates to an evaporation cell (1) for vacuum evaporation chamber, the evaporation cell (1) comprising a crucible (5), the crucible (5) being adapted to receive a solid or liquid material to be sublimated or evaporated, heating means (3) to heat the material in the crucible, a nozzle (6) placed at an open end of the crucible (5), the nozzle (6) comprising a frustoconical portion (61) having an opening (60) adapted for the passage of a flow of evaporated or sublimated material towards the vacuum evaporation chamber, and a cover (7) placed on the nozzle (6), the cover (7) having an opening (70) arranged about the frustoconical portion (61) of the nozzle (6). According to the invention, the cover (7) has at least one frustoconical portion (71, 72, 73) arranged about the frustoconical portion (61) of the nozzle (6), the cover (7) forming a thermal barrier between the crucible (5) and the vacuum evaporation chamber.

Abstract: The present invention relates to a multi-layer material comprising an assembly of layers, called “front layers”, capable of forming a front photovoltaic cell, and an assembly of layers, called “rear layers”, capable of forming a rear photovoltaic cell, wherein the front layer assembly and the rear layer assembly are electrically insulated by an insulating layer of epitaxial material.

Abstract: The present invention relates to a multi-layer material comprising an assembly of layers, called “front layers”, capable of forming a front photovoltaic cell, and an assembly of layers, called “rear layers”, capable of forming a rear photovoltaic cell, wherein the front layer assembly and the rear layer assembly are electrically insulated by an insulating layer of epitaxial material.

Abstract: The leak detection device is adapted to test the tightness of an inner tank (24) of a valve cell (20) of the vacuum deposition apparatus, either at its filling flange (25) or at its inner tank valve (28). A vacuum deposition apparatus equipped with a helium detector (51) mounted as a by-pass of the output of a high-flow-rate turbomolecular pump (42) which is connected to the vacuum deposition chamber (30) of the vacuum deposition apparatus by a slide gate valve (43). A valve-cell vacuum deposition apparatus equipped with a helium-based leak detection device including gas injection elements (52, 53) adapted to inject a gaseous mixture into the outer enclosure, the gaseous mixture being consisted of pure helium and an inert gas, and a method for detecting a leak in a valve-cell vacuum deposition apparatus are also described.

Abstract: The invention concerns a material evaporation chamber including a vacuum chamber (10), a first pumping unit (13) to pump said chamber and sources of material. According to the invention, a wall (23) liable to provide total or partial vacuum tightness, delineates within this chamber a first volume (25) and a second volume (22). Certain sources of material (17) having a main axis (18) are placed in the second volume (22). This second volume (22) is pumped by a second pumping unit (24). The wall (23) includes recesses (26) which are each centered on the main axis (18) of one of the sources of material (17). The evaporation chamber also comprises means (27) for plugging or clearing each of said recesses (26), said means (27) being controlled individually to protect the sources of material (17) having a main axis (18) unused.

Abstract: An injector for a vacuum evaporation source includes an injection duct (1) having a longitudinal axis (11) and an inlet port (2) able to be connected to a vacuum evaporation source, and at least one nozzle (3) for diffusing a vaporized material, the nozzle (3) having a lateral face (4), and an upper face (5). The nozzle (3) includes a main channel (6) emerging outside the injection duct (1) and at least a lateral feeding channel (7) connecting the interior of the injection duct (1) to the main channel (6). The lateral feeding channel (7) has a lateral orifice (8) emerging inside the injection duct (1) through the lateral face (4) of the nozzle (3) for avoiding the clogging of the nozzle (3) by oxidized materials.

Abstract: Disclosed is an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus includes a chamber, a cryogenic panel disposed inside the chamber, a sample holder able to support a substrate, a gas injector able to inject a gaseous precursor into the chamber, a first trap connected to the vacuum chamber and able to trap a part of the gaseous precursor released by the cryogenic panel, the first trap having a fixed pumping capacity S1. The apparatus for depositing a thin film of material on a substrate includes a second trap having a variable pumping capacity S2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap providing a total pumping capacity S=S1+S2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber under a determined pressure PL.

Abstract: The leak detection device is adapted to test the tightness of an inner tank (24) of a valve cell (20) of the vacuum deposition apparatus, either at its filling flange (25) or at its inner tank valve (28). A vacuum deposition apparatus equipped with a helium detector (51) mounted as a by-pass of the output of a high-flow-rate turbomolecular pump (42) which is connected to the vacuum deposition chamber (30) of the vacuum deposition apparatus by a slide gate valve (43). A valve-cell vacuum deposition apparatus equipped with a helium-based leak detection device including gas injection elements (52, 53) adapted to inject a gaseous mixture into the outer enclosure, the gaseous mixture being consisted of pure helium and an inert gas, and a method for detecting a leak in a valve-cell vacuum deposition apparatus are also described.

Abstract: An injector for a vacuum vapour deposition system, includes an injection duct suitable for receiving vaporized materials from a vacuum evaporation source and a diffuser having a plurality of nozzles for diffusing the vaporized materials into a vacuum deposition chamber, each nozzle including a channel suitable for connecting the injection duct to the deposition chamber. The diffuser has a spatially varying nozzle distribution. A process for calibrating an injector and a process for manufacturing a diffuser for an injector are also described.

Abstract: An injector for a vacuum evaporation source includes an injection duct (1) having a longitudinal axis (11) and an inlet port (2) able to be connected to a vacuum evaporation source, and at least one nozzle (3) for diffusing a vaporized material, the nozzle (3) having a lateral face (4), and an upper face (5). The nozzle (3) includes a main channel (6) emerging outside the injection duct (1) and at least a lateral feeding channel (7) connecting the interior of the injection duct (1) to the main channel (6). The lateral feeding channel (7) has a lateral orifice (8) emerging inside the injection duct (1) through the lateral face (4) of the nozzle (3) for avoiding the clogging of the nozzle (3) by oxidized materials.

Abstract: Disclosed is an apparatus for depositing a thin film of material on a substrate and a regeneration process. The apparatus includes a chamber, a cryogenic panel disposed inside the chamber, a sample holder able to support a substrate, a gas injector able to inject a gaseous precursor into the chamber, a first trap connected to the vacuum chamber and able to trap a part of the gaseous precursor released by the cryogenic panel, the first trap having a fixed pumping capacity S1. The apparatus for depositing a thin film of material on a substrate includes a second trap having a variable pumping capacity S2 able to be regulated in function of the gaseous precursor partial pressure, the first and second trap providing a total pumping capacity S=S1+S2 sufficient to maintain the gaseous precursor partial pressure in the vacuum chamber under a determined pressure PL.

Abstract: Described is equipment for depositing materials by evaporation using a molecular beam and equipment for fabricating semiconductor wafers, including a central conveyor module having a plurality of lateral ports capable of functioning under vacuum pressure conditions above 10?8 Torr. The semiconductor wafer fabrication equipment includes a loader module and one or more substrate treatment modules functioning under vacuum pressure conditions above 10?8 Torr, each treatment module being connected to one of the ports of the central conveyor module. The fabrication equipment includes at least one module for depositing materials by evaporation using a molecular beam operating under vacuum pressure conditions below 10?8 Torr, the molecular beam deposition module being connected to one of the ports of the central conveyor module and being capable of receiving the substrate in order to deposit a layer of materials on its face to be treated.

Abstract: A molecular beam epitaxy apparatus for producing wafers of semiconductor material includes a growth chamber surrounding a process area, a main cryogenic panel having a lateral part covering the inner surface of the lateral wall of the growth chamber, a sample holder, at least one effusion cell able to evaporate a material, a gas injector to inject a gaseous precursor into the growth chamber, a pumping element connected to the growth chamber to provide high vacuum capability. The apparatus includes an insulation enclosure covering at least the inner surfaces of the growth chamber walls, the insulation enclosure including cold parts having a temperature Tmin?melting point of the gaseous precursor, and hot parts having a temperature Tmin?a temperature wherein the desorption rate of the gaseous precursor on the hot parts is at least 1000 times greater than the adsorption rate of the gaseous precursor.

Abstract: The invention provides a method for forming a selective mask on a surface of a layer of AlXGaYIn1-X-YAsZP1-Z or AlXGaYIn1-X-YNZAs1-Z (0?X?1, 0?Y?1, 0?Z?1), which is a method for forming a mask with a minute width suitable for microfabrication in nano-order. (1) An energy beam 4a, 4b is selectively irradiated onto a natural oxide layer 2 formed on the surface of the layer 1 of AlXGaYIn1-X-YAsZP1-Z or AlXGaYIn1-X-YNZAs1-Z. (2) Of the natural oxide layer 2, parts other than parts onto which the energy beam 4a, 4b has been irradiated is removed by heating. (3) The natural oxide layer 2 of the parts onto which the energy beam 4a, 4b has been irradiated is partially removed by heating while alternatively carrying out a rise and fall in heating temperature.

Abstract: Onto a surface of an AlxGayIn1-x-yAszP1-z (0?x, y, z?1) layer including GaAs alone or an InP substrate, an electron beam controlled to an arbitrary electron beam diameter and current density is irradiated so as to selectively substitute or generate Ga2O3 for a natural oxide layer formed on the AlxGayIn1-x-yAszP1-z, layer surface, then the AlxGayIn1-x-yAszP1-z layer surface is dry-etched by a bromide in single atomic layer units, whereby the natural oxide layer other than the part substituted by the Ga2O3 and AlxGayIn1-x-yAszP1-z substrate are removed.

Abstract: Surface of a thin film formed on a surface of substrate of AlxGayIn1-x-yAszP1-z (0?x<1, 0?y and z?1) including substances GaAs and InP is irradiated with electron beams controlled at any arbitrary electron beam diameter and current density so as to cause any natural oxide film formed on GaAs surface to undergo selective Ga2O3 substitution or formation. Thereafter, the temperature of the substrate is adjusted to given temperature so as to effect detachment of the natural oxide film at region other than that of Ga2O3 substitution. Selective growth of a Group III-V compound semiconductor crystal is carried out on the substrate on its side of natural oxide film detachment in accordance with the molecular beam epitaxial growing technique to thereby achieve an increase of substrate density. On-site formation of a circuit pattern having the crystal film thickness along the direction of crystal growth uniformalized on the order of nanometers is accomplished.

Abstract: A phosphorus effusion cell for molecular beam epitaxy is disclosed. It consists of a vessel in which, by sublimation of red phosphorus, the vapor of this element is produced, the vessel being closed by means of a vacuum tight valve which regulates its flow. In the vessel, there are two zones having different temperatures, one of sublimation of red phosphorus and another of condensation and re-evaporation of white phosphorus, both zones being thermally insulated by means of reflecting screens which prevent the temperature of the heating resistance from having to reach temperatures above 350.degree. C. The valve, intermittent closing of which regulates the effusion of phosphorus vapor, is at a temperature slightly above that of the thermostated zone of condensation/re-evaporation of the white phosphorus. It finds applicable in the manufacture of semiconducting structures.

Abstract: A phosphorus effusion cell for molecular beam epitaxy is disclosed. It consists of a vessel in which, by sublimation of red phosphorus, the vapor of this element is produced, the vessel being closed by means of a vacuum tight valve which regulates its flow. In the vessel, there are two zones having different temperatures, one of sublimation of red phosphorus and another of condensation and re-evaporation of white phosphorus, both zones being thermally insulated by means of reflecting screens which prevent the temperature of the heating resistance from having to reach temperatures above 350.degree. C. The valve, intermittent closing of which regulates the effusion of phosphorus vapor, is at a temperature slightly above that of the thermostated zone of condensation/re-evaporation of the white phosphorus. It finds applicable in the manufacture of semiconducting structures.