Abstract: A sheet random access memory (SHRAM) is a truly random access, nonvolatile and transportable memory characterized by the cell density, size and power requirements of smaller dynamic memories but having the nonvolatile character of core memories or magnetic disks and tape and the rugged transportability of magnetic disk and tape. The SHRAM is characterized by a memory media comprising a two dimensional magnetic substrate and a fixed driving device for writing and reading into the substrate and a fixed sensing device for sensing the information at each cell location. In one embodiment the fixed sensing device is a sensing line in close proximity to a cell location. In a second embodiment, a fixed sensing device includes a Hall effect device which senses the magnetic configuration of the cell. In a third embodiment, the fixed sensing device includes an SCS thyristor in which the cathode gate is coupled to the magnetic configuration of the cell.